J. Kawakami, Y. Kinami, Masahiro Takahashi, S. Ito
{"title":"2-羟色胺菊酯和1-甲酰基-2-羟色胺菊酯作为荧光金属离子传感器和近红外荧光标记试剂","authors":"J. Kawakami, Y. Kinami, Masahiro Takahashi, S. Ito","doi":"10.14723/TMRSJ.43.109","DOIUrl":null,"url":null,"abstract":"140190C. As can be seen, the leakage current density for all samples is less than 110-5 A/cm2 under an applied field of up to 150 kV/cm, indicating excellent electrical insulation properties. Furthermore, the point at which electrical breakdown occurs shifts to lower electric field as the reaction temperature decreases from 140 to 160°C. The samples produced at 180 and 190°C exhibited strong electrical insulation properties even under a high applied field of up to 300 kV/cm. Figure 7 shows room-temperature P–E hysteresis loops for a sample with a CFO layer synthesized at 180C, and a sample with no CFO layer. Both samples exhibit good hysteresis loop shapes with excellent symmetry. The values of 2Pr (6365 C/cm2) and the coercive field (2Ec: 443445 kV/cm) are the same for both samples within the experimental error. This demonstrates that the nonaqueous sol-gel process is an effective method for introducing fine ferromagnetic particles into the nanospaces between the ferroelectric plates without degrading their electrical properties. The dependence of the room-temperature 2Pr and 2Ec values on the CFO synthesis temperature is shown in Fig. 7(c). 2Pr and 2Ec are seen to be almost constant at 5867 C/cm2 and 421462 kV/cm, respectively, regardless of the reaction temperature. In particular, the 2Pr values are comparable to that for Pb(Zr,Ti)O3, which is currently used in ferroelectric non-volatile memory applications, indicating that the performance level is practical. It can therefore be concluded that the optimal reaction temperature for depositing fine CFO particles on BNEuT/Nb:TiO2 substrates by the non-aqueous sol-gel process is 180°C, from the viewpoints of the structural, magnetization magnetic field, ferroelectric, and leakage current characteristics. 4. CONCLUSION Ferromagnetic CFO thin films were synthesized on (Bi3.25Nd0.65Eu0.10)Ti3O12/Nb:TiO2 substrates at reaction temperatures of 140190C using a non-aqueous sol-gel process. The magnetic properties of the films were measured, and the sample synthesized at 180C was found to exhibit the highest residual magnetization and coercivity of 1.5 emu/g and 134 Oe, respectively. The ferroelectric properties of all samples were similar, with a large remanent polarization of 5867 C/cm2 and a coercive field of 421462 kV/cm, regardless of the reaction temperature. Based on its magnetic and ferroelectric properties, it can be concluded that the sample synthesized at 180C has potential as a practical multiferroic material.","PeriodicalId":23220,"journal":{"name":"Transactions-Materials Research Society of Japan","volume":"19 1","pages":"109-112"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"2-Hydroxytryptanthrin and 1-Formyl-2-hydroxytryptanthrin as Fluorescent Metal-ion Sensors and Near-infrared Fluorescent Labeling Reagents\",\"authors\":\"J. Kawakami, Y. Kinami, Masahiro Takahashi, S. Ito\",\"doi\":\"10.14723/TMRSJ.43.109\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"140190C. As can be seen, the leakage current density for all samples is less than 110-5 A/cm2 under an applied field of up to 150 kV/cm, indicating excellent electrical insulation properties. Furthermore, the point at which electrical breakdown occurs shifts to lower electric field as the reaction temperature decreases from 140 to 160°C. The samples produced at 180 and 190°C exhibited strong electrical insulation properties even under a high applied field of up to 300 kV/cm. Figure 7 shows room-temperature P–E hysteresis loops for a sample with a CFO layer synthesized at 180C, and a sample with no CFO layer. Both samples exhibit good hysteresis loop shapes with excellent symmetry. The values of 2Pr (6365 C/cm2) and the coercive field (2Ec: 443445 kV/cm) are the same for both samples within the experimental error. This demonstrates that the nonaqueous sol-gel process is an effective method for introducing fine ferromagnetic particles into the nanospaces between the ferroelectric plates without degrading their electrical properties. The dependence of the room-temperature 2Pr and 2Ec values on the CFO synthesis temperature is shown in Fig. 7(c). 2Pr and 2Ec are seen to be almost constant at 5867 C/cm2 and 421462 kV/cm, respectively, regardless of the reaction temperature. In particular, the 2Pr values are comparable to that for Pb(Zr,Ti)O3, which is currently used in ferroelectric non-volatile memory applications, indicating that the performance level is practical. It can therefore be concluded that the optimal reaction temperature for depositing fine CFO particles on BNEuT/Nb:TiO2 substrates by the non-aqueous sol-gel process is 180°C, from the viewpoints of the structural, magnetization magnetic field, ferroelectric, and leakage current characteristics. 4. CONCLUSION Ferromagnetic CFO thin films were synthesized on (Bi3.25Nd0.65Eu0.10)Ti3O12/Nb:TiO2 substrates at reaction temperatures of 140190C using a non-aqueous sol-gel process. The magnetic properties of the films were measured, and the sample synthesized at 180C was found to exhibit the highest residual magnetization and coercivity of 1.5 emu/g and 134 Oe, respectively. The ferroelectric properties of all samples were similar, with a large remanent polarization of 5867 C/cm2 and a coercive field of 421462 kV/cm, regardless of the reaction temperature. Based on its magnetic and ferroelectric properties, it can be concluded that the sample synthesized at 180C has potential as a practical multiferroic material.\",\"PeriodicalId\":23220,\"journal\":{\"name\":\"Transactions-Materials Research Society of Japan\",\"volume\":\"19 1\",\"pages\":\"109-112\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Transactions-Materials Research Society of Japan\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.14723/TMRSJ.43.109\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Transactions-Materials Research Society of Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.14723/TMRSJ.43.109","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
2-Hydroxytryptanthrin and 1-Formyl-2-hydroxytryptanthrin as Fluorescent Metal-ion Sensors and Near-infrared Fluorescent Labeling Reagents
140190C. As can be seen, the leakage current density for all samples is less than 110-5 A/cm2 under an applied field of up to 150 kV/cm, indicating excellent electrical insulation properties. Furthermore, the point at which electrical breakdown occurs shifts to lower electric field as the reaction temperature decreases from 140 to 160°C. The samples produced at 180 and 190°C exhibited strong electrical insulation properties even under a high applied field of up to 300 kV/cm. Figure 7 shows room-temperature P–E hysteresis loops for a sample with a CFO layer synthesized at 180C, and a sample with no CFO layer. Both samples exhibit good hysteresis loop shapes with excellent symmetry. The values of 2Pr (6365 C/cm2) and the coercive field (2Ec: 443445 kV/cm) are the same for both samples within the experimental error. This demonstrates that the nonaqueous sol-gel process is an effective method for introducing fine ferromagnetic particles into the nanospaces between the ferroelectric plates without degrading their electrical properties. The dependence of the room-temperature 2Pr and 2Ec values on the CFO synthesis temperature is shown in Fig. 7(c). 2Pr and 2Ec are seen to be almost constant at 5867 C/cm2 and 421462 kV/cm, respectively, regardless of the reaction temperature. In particular, the 2Pr values are comparable to that for Pb(Zr,Ti)O3, which is currently used in ferroelectric non-volatile memory applications, indicating that the performance level is practical. It can therefore be concluded that the optimal reaction temperature for depositing fine CFO particles on BNEuT/Nb:TiO2 substrates by the non-aqueous sol-gel process is 180°C, from the viewpoints of the structural, magnetization magnetic field, ferroelectric, and leakage current characteristics. 4. CONCLUSION Ferromagnetic CFO thin films were synthesized on (Bi3.25Nd0.65Eu0.10)Ti3O12/Nb:TiO2 substrates at reaction temperatures of 140190C using a non-aqueous sol-gel process. The magnetic properties of the films were measured, and the sample synthesized at 180C was found to exhibit the highest residual magnetization and coercivity of 1.5 emu/g and 134 Oe, respectively. The ferroelectric properties of all samples were similar, with a large remanent polarization of 5867 C/cm2 and a coercive field of 421462 kV/cm, regardless of the reaction temperature. Based on its magnetic and ferroelectric properties, it can be concluded that the sample synthesized at 180C has potential as a practical multiferroic material.