2-羟色胺菊酯和1-甲酰基-2-羟色胺菊酯作为荧光金属离子传感器和近红外荧光标记试剂

J. Kawakami, Y. Kinami, Masahiro Takahashi, S. Ito
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The values of 2Pr (6365 C/cm2) and the coercive field (2Ec: 443445 kV/cm) are the same for both samples within the experimental error. This demonstrates that the nonaqueous sol-gel process is an effective method for introducing fine ferromagnetic particles into the nanospaces between the ferroelectric plates without degrading their electrical properties. The dependence of the room-temperature 2Pr and 2Ec values on the CFO synthesis temperature is shown in Fig. 7(c). 2Pr and 2Ec are seen to be almost constant at 5867 C/cm2 and 421462 kV/cm, respectively, regardless of the reaction temperature. In particular, the 2Pr values are comparable to that for Pb(Zr,Ti)O3, which is currently used in ferroelectric non-volatile memory applications, indicating that the performance level is practical. It can therefore be concluded that the optimal reaction temperature for depositing fine CFO particles on BNEuT/Nb:TiO2 substrates by the non-aqueous sol-gel process is 180°C, from the viewpoints of the structural, magnetization magnetic field, ferroelectric, and leakage current characteristics. 4. CONCLUSION Ferromagnetic CFO thin films were synthesized on (Bi3.25Nd0.65Eu0.10)Ti3O12/Nb:TiO2 substrates at reaction temperatures of 140190C using a non-aqueous sol-gel process. The magnetic properties of the films were measured, and the sample synthesized at 180C was found to exhibit the highest residual magnetization and coercivity of 1.5 emu/g and 134 Oe, respectively. The ferroelectric properties of all samples were similar, with a large remanent polarization of 5867 C/cm2 and a coercive field of 421462 kV/cm, regardless of the reaction temperature. 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引用次数: 5

摘要

140年190C。可以看出,在高达150 kV/cm的电场作用下,所有样品的泄漏电流密度均小于110-5 A/cm2,具有优异的电绝缘性能。此外,当反应温度从140°C降低到160°C时,发生电击穿的点向较低的电场移动。在180°C和190°C下产生的样品即使在高达300 kV/cm的高电场下也表现出很强的电绝缘性能。图7显示了在180℃合成CFO层的样品和没有CFO层的样品的室温P-E磁滞回线。两种样品均表现出良好的磁滞回线形状和良好的对称性。在实验误差范围内,两种样品的2Pr值(63±65C/cm2)和矫顽力场值(2Ec: 443±445 kV/cm)相同。这表明,非水溶胶-凝胶工艺是一种有效的方法,可以在不降低铁电板电性能的情况下将铁磁微粒引入铁电板之间的纳米空间。室温2Pr和2Ec值对CFO合成温度的依赖关系如图7(c)所示。无论反应温度如何,2Pr和2Ec几乎都是恒定的,分别为58℃67C/cm2和421℃462 kV/cm。特别是,2Pr值与目前用于铁电非易失性存储器应用的Pb(Zr,Ti)O3相当,表明性能水平是实用的。综上所述,从结构、磁化、磁场、铁电特性和漏电流特性等方面考虑,非水溶胶-凝胶法在BNEuT/Nb:TiO2衬底上沉积精细CFO颗粒的最佳反应温度为180℃。4. 结论采用非水溶胶-凝胶法在(Bi3.25Nd0.65Eu0.10)Ti3O12/Nb:TiO2底物上合成了铁磁性CFO薄膜,反应温度为140℃~ 190℃。测定了膜的磁性能,发现在180℃下合成的样品具有最高的残余磁化强度和矫顽力,分别为1.5 emu/g和134 Oe。所有样品的铁电性能相似,无论反应温度如何,残余极化均为58 67C/cm2,矫顽力场为421 462 kV/cm。根据其磁性和铁电性能,可以得出结论,在180°C下合成的样品具有作为实用的多铁性材料的潜力。
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2-Hydroxytryptanthrin and 1-Formyl-2-hydroxytryptanthrin as Fluorescent Metal-ion Sensors and Near-infrared Fluorescent Labeling Reagents
140190C. As can be seen, the leakage current density for all samples is less than 110-5 A/cm2 under an applied field of up to 150 kV/cm, indicating excellent electrical insulation properties. Furthermore, the point at which electrical breakdown occurs shifts to lower electric field as the reaction temperature decreases from 140 to 160°C. The samples produced at 180 and 190°C exhibited strong electrical insulation properties even under a high applied field of up to 300 kV/cm. Figure 7 shows room-temperature P–E hysteresis loops for a sample with a CFO layer synthesized at 180C, and a sample with no CFO layer. Both samples exhibit good hysteresis loop shapes with excellent symmetry. The values of 2Pr (6365 C/cm2) and the coercive field (2Ec: 443445 kV/cm) are the same for both samples within the experimental error. This demonstrates that the nonaqueous sol-gel process is an effective method for introducing fine ferromagnetic particles into the nanospaces between the ferroelectric plates without degrading their electrical properties. The dependence of the room-temperature 2Pr and 2Ec values on the CFO synthesis temperature is shown in Fig. 7(c). 2Pr and 2Ec are seen to be almost constant at 5867 C/cm2 and 421462 kV/cm, respectively, regardless of the reaction temperature. In particular, the 2Pr values are comparable to that for Pb(Zr,Ti)O3, which is currently used in ferroelectric non-volatile memory applications, indicating that the performance level is practical. It can therefore be concluded that the optimal reaction temperature for depositing fine CFO particles on BNEuT/Nb:TiO2 substrates by the non-aqueous sol-gel process is 180°C, from the viewpoints of the structural, magnetization magnetic field, ferroelectric, and leakage current characteristics. 4. CONCLUSION Ferromagnetic CFO thin films were synthesized on (Bi3.25Nd0.65Eu0.10)Ti3O12/Nb:TiO2 substrates at reaction temperatures of 140190C using a non-aqueous sol-gel process. The magnetic properties of the films were measured, and the sample synthesized at 180C was found to exhibit the highest residual magnetization and coercivity of 1.5 emu/g and 134 Oe, respectively. The ferroelectric properties of all samples were similar, with a large remanent polarization of 5867 C/cm2 and a coercive field of 421462 kV/cm, regardless of the reaction temperature. Based on its magnetic and ferroelectric properties, it can be concluded that the sample synthesized at 180C has potential as a practical multiferroic material.
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