M. Bouttemy, S. Béchu, B. Spencer, Pia Dally, P. Chapon, A. Etcheberry
{"title":"结合脉冲射频GD-OES和HAXPES的涂层深度定量分析","authors":"M. Bouttemy, S. Béchu, B. Spencer, Pia Dally, P. Chapon, A. Etcheberry","doi":"10.3390/COATINGS11060702","DOIUrl":null,"url":null,"abstract":"Chemical characterization at buried interfaces is a real challenge, as the physico-chemical processes operating at the interface govern the properties of many systems and devices. We have developed a methodology based on the combined use of pulsed RF GD-OES (pulsed Radio Frequency Glow Discharge Optical Emission Spectrometry) and XPS (X-ray Photoelectron Spectroscopy) to facilitate the access to deeply buried locations (taking advantage of the high profiling rate of the GD-OES) and perform an accurate chemical diagnosis using XPS directly inside the GD crater. The reliability of the chemical information is, however, influenced by a perturbed layer present at the surface of the crater, hindering traditional XPS examination due to a relatively short sampling depth. Sampling below the perturbed layer may, however, can be achieved using a higher energy excitation source with an increased sampling depth, and is enabled here by a new laboratory-based HAXPES (Hard X-ray PhotoElectron Spectroscopy) (Ga-Kα, 9.25 keV). This new approach combining HAXPES with pulsed RF GD-OES requires benchmarking and is here demonstrated and evaluated on InP. The perturbed depth is estimated and the consistency of the chemical information measured is demonstrated, offering a new route for advanced chemical depth profiling through coatings and heterostructures.","PeriodicalId":22482,"journal":{"name":"THE Coatings","volume":"1 1","pages":"702"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Combined Pulsed RF GD-OES and HAXPES for Quantified Depth Profiling through Coatings\",\"authors\":\"M. Bouttemy, S. Béchu, B. Spencer, Pia Dally, P. Chapon, A. Etcheberry\",\"doi\":\"10.3390/COATINGS11060702\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Chemical characterization at buried interfaces is a real challenge, as the physico-chemical processes operating at the interface govern the properties of many systems and devices. We have developed a methodology based on the combined use of pulsed RF GD-OES (pulsed Radio Frequency Glow Discharge Optical Emission Spectrometry) and XPS (X-ray Photoelectron Spectroscopy) to facilitate the access to deeply buried locations (taking advantage of the high profiling rate of the GD-OES) and perform an accurate chemical diagnosis using XPS directly inside the GD crater. The reliability of the chemical information is, however, influenced by a perturbed layer present at the surface of the crater, hindering traditional XPS examination due to a relatively short sampling depth. Sampling below the perturbed layer may, however, can be achieved using a higher energy excitation source with an increased sampling depth, and is enabled here by a new laboratory-based HAXPES (Hard X-ray PhotoElectron Spectroscopy) (Ga-Kα, 9.25 keV). This new approach combining HAXPES with pulsed RF GD-OES requires benchmarking and is here demonstrated and evaluated on InP. The perturbed depth is estimated and the consistency of the chemical information measured is demonstrated, offering a new route for advanced chemical depth profiling through coatings and heterostructures.\",\"PeriodicalId\":22482,\"journal\":{\"name\":\"THE Coatings\",\"volume\":\"1 1\",\"pages\":\"702\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"THE Coatings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3390/COATINGS11060702\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"THE Coatings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/COATINGS11060702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Combined Pulsed RF GD-OES and HAXPES for Quantified Depth Profiling through Coatings
Chemical characterization at buried interfaces is a real challenge, as the physico-chemical processes operating at the interface govern the properties of many systems and devices. We have developed a methodology based on the combined use of pulsed RF GD-OES (pulsed Radio Frequency Glow Discharge Optical Emission Spectrometry) and XPS (X-ray Photoelectron Spectroscopy) to facilitate the access to deeply buried locations (taking advantage of the high profiling rate of the GD-OES) and perform an accurate chemical diagnosis using XPS directly inside the GD crater. The reliability of the chemical information is, however, influenced by a perturbed layer present at the surface of the crater, hindering traditional XPS examination due to a relatively short sampling depth. Sampling below the perturbed layer may, however, can be achieved using a higher energy excitation source with an increased sampling depth, and is enabled here by a new laboratory-based HAXPES (Hard X-ray PhotoElectron Spectroscopy) (Ga-Kα, 9.25 keV). This new approach combining HAXPES with pulsed RF GD-OES requires benchmarking and is here demonstrated and evaluated on InP. The perturbed depth is estimated and the consistency of the chemical information measured is demonstrated, offering a new route for advanced chemical depth profiling through coatings and heterostructures.