{"title":"等离子体增强化学气相沉积f掺杂SiO/ sub2 /薄膜的介电击穿","authors":"H. Kato, S. Sakai, A. Takami, Y. Ohki, K. Ishii","doi":"10.1109/ICSD.1998.709302","DOIUrl":null,"url":null,"abstract":"Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF/sub 4/, and the dielectric strength was measured with a self-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.","PeriodicalId":13148,"journal":{"name":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","volume":"60 1","pages":"368-371"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dielectric breakdown in F-doped SiO/sub 2/ films formed by plasma-enhanced chemical vapor deposition\",\"authors\":\"H. Kato, S. Sakai, A. Takami, Y. Ohki, K. Ishii\",\"doi\":\"10.1109/ICSD.1998.709302\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF/sub 4/, and the dielectric strength was measured with a self-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.\",\"PeriodicalId\":13148,\"journal\":{\"name\":\"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)\",\"volume\":\"60 1\",\"pages\":\"368-371\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSD.1998.709302\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSD.1998.709302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dielectric breakdown in F-doped SiO/sub 2/ films formed by plasma-enhanced chemical vapor deposition
Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF/sub 4/, and the dielectric strength was measured with a self-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.
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