聚乙烯-铂界面电荷注入的量子力学研究

A. Huzayyin, S. Boggs, R. Ramprasad
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引用次数: 26

摘要

利用密度泛函理论(DFT)研究了聚乙烯/铂界面上的电荷注入。考虑了界面异质结构处的各种晶体取向。计算得到无杂质界面上电子和空穴注入的最小势垒分别为3.15 eV和2.62 eV。研究表明,化学杂质在注射过程中起着重要的作用。杂质态,如羰基态,可以将有效的电荷注入势垒降低到1.0 eV左右。
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Quantum mechanical study of charge injection at the interface of polyethylene and platinum
Charge injection at a polyethylene/platinum interface is studied through use of density functional theory (DFT). Various crystal orientations at the interface hetero-structure are considered. The computed minimum barriers for electrons and hole injection at an impurity free interface are 3.15 and 2.62 eV, respectively. The work demonstrates that chemical impurities play an important role in the injection process. Impurity states, such as those of carbonyl, can reduce the effective barriers to charge injection to about 1.0 eV.
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