TRRespass:利用目标行刷新的多个方面

Pietro Frigo, Emanuele Vannacci, Hasan Hassan, V. V. D. Veen, O. Mutlu, Cristiano Giuffrida, H. Bos, Kaveh Razavi
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引用次数: 133

摘要

在一系列备受瞩目的RowHammer攻击之后,CPU和DRAM供应商争相推出针对RowHammer问题的最终硬件解决方案:目标行刷新(TRR)。从业者普遍认为,对于受TRR保护的最新一代DDR4系统,RowHammer在实践中不再是一个问题。然而,在现实中,我们对TRR知之甚少。TRR究竟是如何预防RowHammer的呢?系统的哪些部分负责运行TRR机制?TRR是否完全解决了RowHammer问题,或者它是否有弱点?在本文中,我们揭开了TRR的内部工作原理,并揭穿了其安全保证。我们展示了被宣传为单一缓解机制的东西实际上是一系列不同的解决方案合并在目标行刷新这个总术语下。通过深入分析,我们检查并披露了不同的现有TRR解决方案,并展示了现代实现完全在DRAM芯片内运行。尽管分析dram内的缓解存在困难,但我们描述了一些新技术,以深入了解这些缓解机制的运作。这些见解使我们能够构建TRRespass,这是一个可扩展的黑盒RowHammer模糊器,我们对42个最近的DDR4模块进行了评估。TRRespass表明,即使是最新一代具有内置dram TRR的DDR4芯片,也可以免疫所有已知的RowHammer攻击,但通常仍然容易受到我们开发的新的TRR感知RowHammer变体的攻击。特别是,TRRespass发现,在当今的DDR4模块上,当使用许多攻击行(在某些情况下多达19行)时,我们通常将其称为多方RowHammer的方法,仍然可以进行RowHammer。总体而言,我们的分析显示,来自三大DRAM供应商(即三星,美光和海力士)的42个模块中有13个容易受到我们trr感知的RowHammer访问模式的攻击,因此仍然可以安装现有的最先进的系统级RowHammer攻击。除了DDR4,我们还对LPDDR4(X)1芯片进行了实验,并表明它们也容易受到RowHammer位翻转的影响。我们的研究结果提供了具体的证据,表明必须继续寻求更好的RowHammer缓解措施。
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TRRespass: Exploiting the Many Sides of Target Row Refresh
After a plethora of high-profile RowHammer attacks, CPU and DRAM vendors scrambled to deliver what was meant to be the definitive hardware solution against the RowHammer problem: Target Row Refresh (TRR). A common belief among practitioners is that, for the latest generation of DDR4 systems that are protected by TRR, RowHammer is no longer an issue in practice. However, in reality, very little is known about TRR. How does TRR exactly prevent RowHammer? Which parts of a system are responsible for operating the TRR mechanism? Does TRR completely solve the RowHammer problem or does it have weaknesses? In this paper, we demystify the inner workings of TRR and debunk its security guarantees. We show that what is advertised as a single mitigation mechanism is actually a series of different solutions coalesced under the umbrella term Target Row Refresh. We inspect and disclose, via a deep analysis, different existing TRR solutions and demonstrate that modern implementations operate entirely inside DRAM chips. Despite the difficulties of analyzing in-DRAM mitigations, we describe novel techniques for gaining insights into the operation of these mitigation mechanisms. These insights allow us to build TRRespass, a scalable black-box RowHammer fuzzer that we evaluate on 42 recent DDR4 modules. TRRespass shows that even the latest generation DDR4 chips with in-DRAM TRR, immune to all known RowHammer attacks, are often still vulnerable to new TRR-aware variants of RowHammer that we develop. In particular, TRRespass finds that, on present-day DDR4 modules, RowHammer is still possible when many aggressor rows are used (as many as 19 in some cases), with a method we generally refer to as Many-sided RowHammer. Overall, our analysis shows that 13 out of the 42 modules from all three major DRAM vendors (i.e., Samsung, Micron, and Hynix) are vulnerable to our TRR-aware RowHammer access patterns, and thus one can still mount existing state-of-the-art system-level RowHammer attacks. In addition to DDR4, we also experiment with LPDDR4(X)1 chips and show that they are susceptible to RowHammer bit flips too. Our results provide concrete evidence that the pursuit of better RowHammer mitigations must continue.
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