P. Rava, G. Crovini, F. Demichelis, F. Giorgis, R. Galloni, R. Rizzoli, C. Summonte
{"title":"SiH4-CH4-H2混合气体PECVD中的粉末耗散","authors":"P. Rava, G. Crovini, F. Demichelis, F. Giorgis, R. Galloni, R. Rizzoli, C. Summonte","doi":"10.1051/JPHYSCOL:19955133","DOIUrl":null,"url":null,"abstract":"The effective dissipated power in SiH 4 -CH 4 -H 2 plasmas excited by 13.56 MHz has been measured for different gas ratios using a subtractive technique to take into account the effects of power losses in the rf circuit. It is found that the dissipated power in general increases with increasing CH 4 concentration and decreases with increasing H 2 concentration. Optical, electrical and defective properties of films deposited under a wide range of deposition conditions have been measured and correlated with dissipated power.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"44 1","pages":"1125"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Powder Dissipation in PECVD for SiH4-CH4-H2 Gas Mixtures\",\"authors\":\"P. Rava, G. Crovini, F. Demichelis, F. Giorgis, R. Galloni, R. Rizzoli, C. Summonte\",\"doi\":\"10.1051/JPHYSCOL:19955133\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effective dissipated power in SiH 4 -CH 4 -H 2 plasmas excited by 13.56 MHz has been measured for different gas ratios using a subtractive technique to take into account the effects of power losses in the rf circuit. It is found that the dissipated power in general increases with increasing CH 4 concentration and decreases with increasing H 2 concentration. Optical, electrical and defective properties of films deposited under a wide range of deposition conditions have been measured and correlated with dissipated power.\",\"PeriodicalId\":17944,\"journal\":{\"name\":\"Le Journal De Physique Colloques\",\"volume\":\"44 1\",\"pages\":\"1125\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Le Journal De Physique Colloques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/JPHYSCOL:19955133\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Le Journal De Physique Colloques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JPHYSCOL:19955133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Powder Dissipation in PECVD for SiH4-CH4-H2 Gas Mixtures
The effective dissipated power in SiH 4 -CH 4 -H 2 plasmas excited by 13.56 MHz has been measured for different gas ratios using a subtractive technique to take into account the effects of power losses in the rf circuit. It is found that the dissipated power in general increases with increasing CH 4 concentration and decreases with increasing H 2 concentration. Optical, electrical and defective properties of films deposited under a wide range of deposition conditions have been measured and correlated with dissipated power.