GaN:Eu基红光发光二极管内部量子效率的工程研究

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI:10.1109/IPCON.2017.8116103

Ioannis E. Fragkos, Chee-Keong Tan, V. Dierolf, Y. Fujiwara, N. Tansu

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引用次数: 0

摘要

建立了电流注入效率模型，以识别和理解GaN:Eu基红色led内部量子效率的限制因素。通过该模型，设计和制造高效的GaN:Eu红外器件是可行的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Engineering the internal quantum efficiency of GaN:Eu based red light emitting diodes

A current injection efficiency model is developed to identify and understand the limiting factors of the internal quantum efficiency in the GaN:Eu based red LEDs. Through this model the design and fabrication of high efficiency GaN:Eu devices in the red spectra regime is feasible.

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2017 IEEE Photonics Conference (IPC) Part II

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