{"title":"化学沉积Cu2S/CSi异质结的光伏效应","authors":"A.J. Varkey","doi":"10.1016/0741-983X(90)90073-B","DOIUrl":null,"url":null,"abstract":"<div><p>Cu<sub>2</sub>S/Si heterojunctions have been fabricated by chemically depositing Cu<sub>2</sub>S thin films on n-type CSi substrates. Films grown on glass slides side by side had a thickness of 0.5 microns, resistivity of 2 × 10<sup>−1</sup> ohm cm and optical band gap of 1.9 eV. Ohmic back contact was made by electroless technique. The front grid was a spring-loaded metal mesh. Junction characteristics were measured on as-grown and air-annealed samples in dark and under illumination of 80 mW/cm<sup>2</sup>. Annealing at 200°C showed substantial improvement on the junction characteristics. Typical values obtained on annealing are <em>J</em><sub>sc</sub> 110 <em>μ</em>A/cm<sup>2</sup>, <em>V</em><sub>oc</sub> 120 mV and F.F. = 0.36. Suggestions for further improvement are also mentioned.</p></div>","PeriodicalId":101171,"journal":{"name":"Solar & Wind Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1990-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0741-983X(90)90073-B","citationCount":"2","resultStr":"{\"title\":\"Photovoltaic effect of chemically deposited Cu2S/CSi heterojunctions\",\"authors\":\"A.J. Varkey\",\"doi\":\"10.1016/0741-983X(90)90073-B\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Cu<sub>2</sub>S/Si heterojunctions have been fabricated by chemically depositing Cu<sub>2</sub>S thin films on n-type CSi substrates. Films grown on glass slides side by side had a thickness of 0.5 microns, resistivity of 2 × 10<sup>−1</sup> ohm cm and optical band gap of 1.9 eV. Ohmic back contact was made by electroless technique. The front grid was a spring-loaded metal mesh. Junction characteristics were measured on as-grown and air-annealed samples in dark and under illumination of 80 mW/cm<sup>2</sup>. Annealing at 200°C showed substantial improvement on the junction characteristics. Typical values obtained on annealing are <em>J</em><sub>sc</sub> 110 <em>μ</em>A/cm<sup>2</sup>, <em>V</em><sub>oc</sub> 120 mV and F.F. = 0.36. Suggestions for further improvement are also mentioned.</p></div>\",\"PeriodicalId\":101171,\"journal\":{\"name\":\"Solar & Wind Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0741-983X(90)90073-B\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solar & Wind Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0741983X9090073B\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar & Wind Technology","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0741983X9090073B","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photovoltaic effect of chemically deposited Cu2S/CSi heterojunctions
Cu2S/Si heterojunctions have been fabricated by chemically depositing Cu2S thin films on n-type CSi substrates. Films grown on glass slides side by side had a thickness of 0.5 microns, resistivity of 2 × 10−1 ohm cm and optical band gap of 1.9 eV. Ohmic back contact was made by electroless technique. The front grid was a spring-loaded metal mesh. Junction characteristics were measured on as-grown and air-annealed samples in dark and under illumination of 80 mW/cm2. Annealing at 200°C showed substantial improvement on the junction characteristics. Typical values obtained on annealing are Jsc 110 μA/cm2, Voc 120 mV and F.F. = 0.36. Suggestions for further improvement are also mentioned.
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