2016 16th International Workshop on Junction Technology (IWJT)

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Dopant activation and crystal recovery in arsenic-implanted ultra-thin silicon-on-insulator structures using 308nm nanosecond laser annealing

Pub Date : 2016-05-09 DOI: 10.1109/IWJT.2016.7486677 S. Kerdilès, P. Alba, B. Mathieu, M. Veillerot, R. Kachtouli, P. Besson, H. Denis, F. Mazzamuto, I. Toqué-Trésonne, K. Huet, C. Fenouillet-Béranger

Vacancy-type defects in Mg-implanted GaN probed by a monoenergetic positron beam

Pub Date : 2016-05-09 DOI: 10.1109/IWJT.2016.7486669 A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, H. Kudo, H. Naramoto, S. Ishibashi

Dual sources U-shape gate tunnel FETs with high on-current and steep SS

Pub Date : 2016-05-09 DOI: 10.1109/IWJT.2016.7486666 Zhi Jiang, Y. Zhuang, Cong Li, Ping Wang

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