Pub Date : 2016-05-09DOI: 10.1109/IWJT.2016.7486677
S. Kerdilès, P. Alba, B. Mathieu, M. Veillerot, R. Kachtouli, P. Besson, H. Denis, F. Mazzamuto, I. Toqué-Trésonne, K. Huet, C. Fenouillet-Béranger
The different regimes encountered when submitting ultra-thin SOI structures implanted with arsenic to single pulse laser annealing with increasing energy density, are identified. It is found that nanosecond UV laser annealing can be successfully applied to rebuild a perfect monocrystalline SOI layer and reach arsenic activation levels at least as high as rapid thermal processing, with a reasonably large process window. Thanks to electrical and morphological characterizations, the defective or polycrystalline silicon obtained below the optimum range is evidenced, as well as the loss of monocrystalline nature of the silicon at the upper end of the process window.
{"title":"Dopant activation and crystal recovery in arsenic-implanted ultra-thin silicon-on-insulator structures using 308nm nanosecond laser annealing","authors":"S. Kerdilès, P. Alba, B. Mathieu, M. Veillerot, R. Kachtouli, P. Besson, H. Denis, F. Mazzamuto, I. Toqué-Trésonne, K. Huet, C. Fenouillet-Béranger","doi":"10.1109/IWJT.2016.7486677","DOIUrl":"https://doi.org/10.1109/IWJT.2016.7486677","url":null,"abstract":"The different regimes encountered when submitting ultra-thin SOI structures implanted with arsenic to single pulse laser annealing with increasing energy density, are identified. It is found that nanosecond UV laser annealing can be successfully applied to rebuild a perfect monocrystalline SOI layer and reach arsenic activation levels at least as high as rapid thermal processing, with a reasonably large process window. Thanks to electrical and morphological characterizations, the defective or polycrystalline silicon obtained below the optimum range is evidenced, as well as the loss of monocrystalline nature of the silicon at the upper end of the process window.","PeriodicalId":117665,"journal":{"name":"2016 16th International Workshop on Junction Technology (IWJT)","volume":" 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132124904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-09DOI: 10.1109/IWJT.2016.7486669
A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, H. Kudo, H. Naramoto, S. Ishibashi
Positron annihilation is a non-destructive tool for investigating vacancy-type defects in materials. Detectable defects are monovacancies to vacancy clusters, and there is no restriction of sample temperature or conductivity. Using this technique, we studied defects introduced by Mg-implantation in GaN. Mg ions of multiple energies (15-180 keV) were implanted to provide a 200-nm-deep box profile with Mg concentration of 4×1019 cm-3. The major defect species of vacancies introduced by Mg-implantation was a complex between Ga-vacancy (VGa) and nitrogen vacancies (VNs). After annealing above 1000°C, these defects started to agglomerate, and the major defect species became (VGa)2 coupled with VNs. The depth distribution of vacancy-type defects agreed well with that of implanted Mg, and no large change in the distribution was observed up to 1300°C annealing.
{"title":"Vacancy-type defects in Mg-implanted GaN probed by a monoenergetic positron beam","authors":"A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, H. Kudo, H. Naramoto, S. Ishibashi","doi":"10.1109/IWJT.2016.7486669","DOIUrl":"https://doi.org/10.1109/IWJT.2016.7486669","url":null,"abstract":"Positron annihilation is a non-destructive tool for investigating vacancy-type defects in materials. Detectable defects are monovacancies to vacancy clusters, and there is no restriction of sample temperature or conductivity. Using this technique, we studied defects introduced by Mg-implantation in GaN. Mg ions of multiple energies (15-180 keV) were implanted to provide a 200-nm-deep box profile with Mg concentration of 4×10<sup>19</sup> cm<sup>-3</sup>. The major defect species of vacancies introduced by Mg-implantation was a complex between Ga-vacancy (V<sub>Ga</sub>) and nitrogen vacancies (V<sub>N</sub>s). After annealing above 1000°C, these defects started to agglomerate, and the major defect species became (V<sub>Ga</sub>)<sub>2</sub> coupled with V<sub>N</sub>s. The depth distribution of vacancy-type defects agreed well with that of implanted Mg, and no large change in the distribution was observed up to 1300°C annealing.","PeriodicalId":117665,"journal":{"name":"2016 16th International Workshop on Junction Technology (IWJT)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124305150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-09DOI: 10.1109/IWJT.2016.7486666
Zhi Jiang, Y. Zhuang, Cong Li, Ping Wang
The current-voltage characteristics of dual source regions and U-shape-gate tunneling field-effect transistor (DUTFET) is investigated. The U-shape-gate offers the enlarged tunneling area and steeper subthreshold swing (SS). The remarkable good performance makes it very attractive in replacing a conventional tunneling field-effect transistor (TFET), particularly for low-power applications.
{"title":"Dual sources U-shape gate tunnel FETs with high on-current and steep SS","authors":"Zhi Jiang, Y. Zhuang, Cong Li, Ping Wang","doi":"10.1109/IWJT.2016.7486666","DOIUrl":"https://doi.org/10.1109/IWJT.2016.7486666","url":null,"abstract":"The current-voltage characteristics of dual source regions and U-shape-gate tunneling field-effect transistor (DUTFET) is investigated. The U-shape-gate offers the enlarged tunneling area and steeper subthreshold swing (SS). The remarkable good performance makes it very attractive in replacing a conventional tunneling field-effect transistor (TFET), particularly for low-power applications.","PeriodicalId":117665,"journal":{"name":"2016 16th International Workshop on Junction Technology (IWJT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130231663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-09DOI: 10.1109/IWJT.2016.7486662
Y. Wang, Shaoyin Chen, M. Shen, Xiaoru Wang
Nanosecond (nsec) melt annealing offers unique capabilities such as ultra low thermal budget, high dopant activation and super abruption junctions. But process integration is more difficult than millisecond (msec) annealing due to two orders of magnitude smaller heat diffusion length. In this paper, we will discuss some of the key challenges, and propose a new approach that combines the benefits of both msec and nsec annealing.
{"title":"From millisecond to nanosecond annealing: Challenges and new approach","authors":"Y. Wang, Shaoyin Chen, M. Shen, Xiaoru Wang","doi":"10.1109/IWJT.2016.7486662","DOIUrl":"https://doi.org/10.1109/IWJT.2016.7486662","url":null,"abstract":"Nanosecond (nsec) melt annealing offers unique capabilities such as ultra low thermal budget, high dopant activation and super abruption junctions. But process integration is more difficult than millisecond (msec) annealing due to two orders of magnitude smaller heat diffusion length. In this paper, we will discuss some of the key challenges, and propose a new approach that combines the benefits of both msec and nsec annealing.","PeriodicalId":117665,"journal":{"name":"2016 16th International Workshop on Junction Technology (IWJT)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114337749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-09DOI: 10.1109/IWJT.2016.7486675
Chuan He, Lin Chen, David-Wei Zhang, J. Hong, Guangyao Jin, J. Zhang, J. Boeker, Renjie Liu, Hao Jin, Yimin Lv, J. Chen
A FinFET doping method with PSG/BSG glass mimic doping was presented and a simplified process flow was introduced. Numerical simulation and experiment results of sheet resistance and SIMS profiles indicated a uniform doping of the 3D FinFET structure with the presented method, by using a proper dielectric layer and conducting an optimized subsequent annealing process.
{"title":"FinFET doping with PSG/BSG glass mimic doping by ultra low energy ion implantation","authors":"Chuan He, Lin Chen, David-Wei Zhang, J. Hong, Guangyao Jin, J. Zhang, J. Boeker, Renjie Liu, Hao Jin, Yimin Lv, J. Chen","doi":"10.1109/IWJT.2016.7486675","DOIUrl":"https://doi.org/10.1109/IWJT.2016.7486675","url":null,"abstract":"A FinFET doping method with PSG/BSG glass mimic doping was presented and a simplified process flow was introduced. Numerical simulation and experiment results of sheet resistance and SIMS profiles indicated a uniform doping of the 3D FinFET structure with the presented method, by using a proper dielectric layer and conducting an optimized subsequent annealing process.","PeriodicalId":117665,"journal":{"name":"2016 16th International Workshop on Junction Technology (IWJT)","volume":"515 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123076606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-09DOI: 10.1109/IWJT.2016.7486671
M. Coig, F. Milési, J. Lerat, T. Desrues, J. Le Perchec, A. Lanterne, L. Lachal, F. Mazen
The doping of n-type silicon solar cells was investigated using two ion implantation techniques: beam line and plasma immersion. Initially, we evaluated the benefits of beamline ion implantation in replacement of diffusion anneal doping process. Two different annealing routines were studied. The first one using a single annealing to activate both B implanted emitter and P implanted BSF, while the second one used two different annealing to separately activate each dopant. Good yield was reached with a record cell of 20.33% efficiency. Secondly, we investigated the doping by plasma immersion ion implantation where the final objective was the fabrication of a solar cell fully doped by plasma. BF3 and B2H6 were compared as precursor gases for the boron emitter doping, while PH3 was used for the BSF doping. Hybrid cells were fabricated using both implantation techniques and a maximum efficiency of 19.8% was obtained. First cells fully doped by plasma shown promising results with a yield of 18.8%.
{"title":"New processes for homojunction silicon solar cells doping: From beam line to plasma immersion ion implantation","authors":"M. Coig, F. Milési, J. Lerat, T. Desrues, J. Le Perchec, A. Lanterne, L. Lachal, F. Mazen","doi":"10.1109/IWJT.2016.7486671","DOIUrl":"https://doi.org/10.1109/IWJT.2016.7486671","url":null,"abstract":"The doping of n-type silicon solar cells was investigated using two ion implantation techniques: beam line and plasma immersion. Initially, we evaluated the benefits of beamline ion implantation in replacement of diffusion anneal doping process. Two different annealing routines were studied. The first one using a single annealing to activate both B implanted emitter and P implanted BSF, while the second one used two different annealing to separately activate each dopant. Good yield was reached with a record cell of 20.33% efficiency. Secondly, we investigated the doping by plasma immersion ion implantation where the final objective was the fabrication of a solar cell fully doped by plasma. BF3 and B2H6 were compared as precursor gases for the boron emitter doping, while PH3 was used for the BSF doping. Hybrid cells were fabricated using both implantation techniques and a maximum efficiency of 19.8% was obtained. First cells fully doped by plasma shown promising results with a yield of 18.8%.","PeriodicalId":117665,"journal":{"name":"2016 16th International Workshop on Junction Technology (IWJT)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125295013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-09DOI: 10.1109/IWJT.2016.7486670
Y. S. Kim, YounGi Hong, I. Berry
Advanced inductively coupled plasma techniques and surface treatments have been used to demonstrate 5nm conformal shallow junctions at low energy with no silicon structure damage. N-type PH3 plasma assisted doping was characterized by dopant diffusion and electrical activation with increasing wafer temperature. Plasma assisted doping at high wafer temperature showed no structure damage even at a high incident energy condition with a bias power applied to the wafer, while a shallow junction of less than 7nm of Xj formation was achieved with low incident energy condition without bias power. Adding a silicon surface modification step when using the decoupled plasma condition prior to PH3 doping was found to enhance the dopant level and lower Rs dramatically. Various annealing techniques were compared to understand the impact to dopant activation and levels to form shallow junctions of less than 7nm.
{"title":"Ultra shallow junction (USJ) formation using plasma assisted doping on 3D devices structures","authors":"Y. S. Kim, YounGi Hong, I. Berry","doi":"10.1109/IWJT.2016.7486670","DOIUrl":"https://doi.org/10.1109/IWJT.2016.7486670","url":null,"abstract":"Advanced inductively coupled plasma techniques and surface treatments have been used to demonstrate 5nm conformal shallow junctions at low energy with no silicon structure damage. N-type PH3 plasma assisted doping was characterized by dopant diffusion and electrical activation with increasing wafer temperature. Plasma assisted doping at high wafer temperature showed no structure damage even at a high incident energy condition with a bias power applied to the wafer, while a shallow junction of less than 7nm of Xj formation was achieved with low incident energy condition without bias power. Adding a silicon surface modification step when using the decoupled plasma condition prior to PH3 doping was found to enhance the dopant level and lower Rs dramatically. Various annealing techniques were compared to understand the impact to dopant activation and levels to form shallow junctions of less than 7nm.","PeriodicalId":117665,"journal":{"name":"2016 16th International Workshop on Junction Technology (IWJT)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126863900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-09DOI: 10.1109/IWJT.2016.7486673
T. Kimoto, K. Kawahara, N. Kaji, H. Fujihara, J. Suda
Electrical activation of implanted dopants and defect generation in SiC have been investigated. A nearly perfect (> 95%) electrical activation can be obtained including the implant tail region after annealing at 1650-1700 °C. The majority of point defects generated in implanted SiC can remarkably be reduced by thermal oxidation. The high activation ratio of implanted Al acceptors is a key factor for fabricating effective junction termination structures in high-voltage SiC devices. Recent high-quality semi-insulating SiC wafers offer the opportunity of high-temperature SiC integrated devices, which can be fabricated by only ion implantation without an epitaxial growth process.
{"title":"Ion implantation technology in SiC for high-voltage/high-temperature devices","authors":"T. Kimoto, K. Kawahara, N. Kaji, H. Fujihara, J. Suda","doi":"10.1109/IWJT.2016.7486673","DOIUrl":"https://doi.org/10.1109/IWJT.2016.7486673","url":null,"abstract":"Electrical activation of implanted dopants and defect generation in SiC have been investigated. A nearly perfect (> 95%) electrical activation can be obtained including the implant tail region after annealing at 1650-1700 °C. The majority of point defects generated in implanted SiC can remarkably be reduced by thermal oxidation. The high activation ratio of implanted Al acceptors is a key factor for fabricating effective junction termination structures in high-voltage SiC devices. Recent high-quality semi-insulating SiC wafers offer the opportunity of high-temperature SiC integrated devices, which can be fabricated by only ion implantation without an epitaxial growth process.","PeriodicalId":117665,"journal":{"name":"2016 16th International Workshop on Junction Technology (IWJT)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116907693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-09DOI: 10.1109/IWJT.2016.7486664
J. Borrel, L. Hutin, H. Grampeix, E. Nolot, Magali Tessaire, G. Rodriguez, Y. Morand, F. Nemouchi, M. Grégoire, E. Dubois, M. Vinet
In this paper, some key fundamental aspects of Metal / Insulator / Semiconductor contacts as well as practical issues occurring with their implementation are reviewed in order to fully comprehend the opportunities and limitations of this approach.
{"title":"Metal/Insulator/Semiconductor contacts for ultimately scaled CMOS nodes: Projected benefits and remaining challenges","authors":"J. Borrel, L. Hutin, H. Grampeix, E. Nolot, Magali Tessaire, G. Rodriguez, Y. Morand, F. Nemouchi, M. Grégoire, E. Dubois, M. Vinet","doi":"10.1109/IWJT.2016.7486664","DOIUrl":"https://doi.org/10.1109/IWJT.2016.7486664","url":null,"abstract":"In this paper, some key fundamental aspects of Metal / Insulator / Semiconductor contacts as well as practical issues occurring with their implementation are reviewed in order to fully comprehend the opportunities and limitations of this approach.","PeriodicalId":117665,"journal":{"name":"2016 16th International Workshop on Junction Technology (IWJT)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132635401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-09DOI: 10.1109/IWJT.2016.7486661
H. Iwai
The progress of the electronics has been conducted until today by the downsizing of devices for more than 100 year since its beginning in early 20th century. However, it is believed now that the downsizing will reach its limit in several years because of several sure reasons. After reaching the limit, we cannot expect such a big progress as the past for electron devices in terms of cost, performance and energy consumption. Then, the effort will be focused to develop various kind of electron devices such as new memory, sensors, power, photovoltaic, battery and MEMS devices which are demanded for IoT era. In a long term, our research and development will shift to how to use the existing bio system more efficiently rather than developing only solid-state devices only.
{"title":"End of the scaling theory and Moore's law","authors":"H. Iwai","doi":"10.1109/IWJT.2016.7486661","DOIUrl":"https://doi.org/10.1109/IWJT.2016.7486661","url":null,"abstract":"The progress of the electronics has been conducted until today by the downsizing of devices for more than 100 year since its beginning in early 20th century. However, it is believed now that the downsizing will reach its limit in several years because of several sure reasons. After reaching the limit, we cannot expect such a big progress as the past for electron devices in terms of cost, performance and energy consumption. Then, the effort will be focused to develop various kind of electron devices such as new memory, sensors, power, photovoltaic, battery and MEMS devices which are demanded for IoT era. In a long term, our research and development will shift to how to use the existing bio system more efficiently rather than developing only solid-state devices only.","PeriodicalId":117665,"journal":{"name":"2016 16th International Workshop on Junction Technology (IWJT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130134227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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