2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - 最新文献

THz bandwidth InP HBT technologies and heterogeneous integration with Si CMOS

Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738973 M. Urteaga, A. Carter, Z. Griffith, R. Pierson, J. Bergman, A. Arias, P. Rowell, J. Hacker, B. Brar, M. Rodwell

Co-simulation and co-design of chip-package-board interfaces in highly-integrated RF systems

Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738959 V. Issakov, M. Wojnowski, H. Knapp, S. Trotta, H. Forstner, K. Pressel, A. Hagelauer

The impacts of base bias resistor and LTE 16QAM signal bandwidth on high-efficiency linear SiGe power amplifier design

Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738967 J. Tsay, Juan José Vaquero López, D. Lie

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2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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同类期刊

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - 最新文献

THz bandwidth InP HBT technologies and heterogeneous integration with Si CMOS

Co-simulation and co-design of chip-package-board interfaces in highly-integrated RF systems

The impacts of base bias resistor and LTE 16QAM signal bandwidth on high-efficiency linear SiGe power amplifier design