{"title":"A high temperature study of the reaction SiH4+H ⇋ SiH3+H2","authors":"A. Kunz, P. Roth","doi":"10.1002/bbpc.19981020109","DOIUrl":null,"url":null,"abstract":"<p>The reaction of silane with H atoms</p><p><span>\n <picture>\n <source></source></picture>\n </span></p><p>was studied behind reflected shock waves at temperatures between 998 K and 1273 K and pressures around 1.5 bar. The thermal decomposition of a few ppm ethyl iodide (C<sub>2</sub>H<sub>5</sub>I) was used as a well known H-atom source. The atomic resonance absorption spectroscopy (ARAS) was applied for time resolved and simultaneous measurements of H- and Si-atom concentrations. The presence of an excess of SiH<sub>4</sub> causes a fast consumption of H atoms according to reaction (R 5). The signals obtained were kinetically evaluated by computer simulations based on a simplified reaction mechanism. The rate coefficient for reaction (R 5) was found to be:</p><p>\n </p>","PeriodicalId":100156,"journal":{"name":"Berichte der Bunsengesellschaft für physikalische Chemie","volume":"102 1","pages":"73-78"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/bbpc.19981020109","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Berichte der Bunsengesellschaft für physikalische Chemie","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/bbpc.19981020109","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
The reaction of silane with H atoms
was studied behind reflected shock waves at temperatures between 998 K and 1273 K and pressures around 1.5 bar. The thermal decomposition of a few ppm ethyl iodide (C2H5I) was used as a well known H-atom source. The atomic resonance absorption spectroscopy (ARAS) was applied for time resolved and simultaneous measurements of H- and Si-atom concentrations. The presence of an excess of SiH4 causes a fast consumption of H atoms according to reaction (R 5). The signals obtained were kinetically evaluated by computer simulations based on a simplified reaction mechanism. The rate coefficient for reaction (R 5) was found to be:
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