Shock Tube Study of the Reaction of Si Atoms with SiCl4

A. Kunz, P. Roth
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引用次数: 5

Abstract

The reaction of Si atoms with SiCl4 was studied behind reflected shock waves at temperatures between 1530 and 1800 K and pressures around 1.7 bar by applying atomic resonance absorption spectroscopy (ARAS) for time-resolved measurement of Si atoms. The thermal decomposition of a few ppm Si2H6 was used as source for Si-atoms. The presence of an excess of SiCl4 causes a fast consumption of Si atoms, which follows a pseudo-first-order rate law. The rate coefficient for the reaction of Si atoms with SiCl4

was determined to be:

k1 = 4.0±0.2×1013cm3 mol−1s−1

with no observable temperature dependence in the temperature range of the present study.

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硅原子与SiCl4反应的激波管研究
采用原子共振吸收光谱(ARAS)对Si原子进行时间分辨测量,研究了在1530 ~ 1800k温度和1.7 bar压力下,Si原子与SiCl4在反射激波下的反应。利用少量ppm Si2H6的热分解作为硅原子的来源。过量SiCl4的存在导致Si原子的快速消耗,这遵循伪一阶速率定律。测定了Si原子与SiCl4反应的速率系数为:k1 = 4.0±0.2×1013cm3 mol−1s−1,在本研究的温度范围内无明显的温度依赖性。
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