A highly integrated 0.25 /spl mu/m BiCMOS chipset for 3G UMTS/WCDMA handset RF sub-system

D. Brunel, C. Caron, C. Cordier, E. Soudée
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引用次数: 25

Abstract

The complete active portion of the 3G UMTS/WCDMA cellular handset RF sub-system is achieved with three RFICs. This chipset comprises a fully integrated ZIF receiver including RF VCO/PLL and UNITS clock generation, a fully Integrated direct conversion like transmitter including RF VCO/PLL, and a 25 dBm average power amplifier including power detection circuitry. The three RFICs use the same baseline 0.25 /spl mu/m BiCMOS technology opening possibilities to even higher integration level. This chipset is targeted at handset class 3 and 4 (PA is class 4 compatible only) European and Japanese 3 G UMTS and WCDMA standards.
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用于3G UMTS/WCDMA手机射频子系统的高度集成的0.25 /spl mu/m BiCMOS芯片组
3G UMTS/WCDMA蜂窝手机射频子系统的完整活动部分由三个rfic实现。该芯片组包括一个完全集成的ZIF接收器,包括RF VCO/PLL和UNITS时钟生成,一个完全集成的直接转换,如发射器,包括RF VCO/PLL,和一个25 dBm平均功率放大器,包括功率检测电路。这三种rfic采用相同的基准0.25 /spl mu/m BiCMOS技术,为更高的集成度提供了可能性。该芯片组针对手机3类和4类(PA仅兼容4类)欧洲和日本3g UMTS和WCDMA标准。
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A highly integrated 0.25 /spl mu/m BiCMOS chipset for 3G UMTS/WCDMA handset RF sub-system Modeling of passive elements with ASITIC A 2V, 2.3/4.6 GHz dual-band CMOS frequency synthesizer A 3-33 GHz PHEMT MMIC distributed drain mixer A 37/spl sim/50 GHz InP HBT VCO IC for OC-768 fiber optic communication applications
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