Study and modeling of a new MOSFET device for precision detection of microwave signal polarization

Abstract

Many instruments and devices are in use and satisfying performance requirements. However, most are neither cost effective nor reliable. They are bulky, heavy and sophisticated. Moreover, they cannot be integrated using MOSFET technology on a single chip. The paper presents a new detector for precise detection of microwave signals. The new detector is composed of a short channel MOSFET (L/spl sim/2 /spl mu/m), acting as a hot carrier injector, surrounded by four diffused collectors, which are topologically, arranged so as to detect the magnitude of the magnetic field to be measured or monitored and determine its orientation. A current cross-coupling technique is used to compensate for the sensor leakage currents (60 dB smaller). A negative feedback is introduced to improve the detector linearity (better than 2%) and stability. Magnetic field as small as 10 nT has been measured over a wide dynamic range (/spl sim/120 dB) of measurement.