A high-frequency high-Q CMOS active inductor with DC bias control

A. Ilker Karsilayan, R. Schaumann
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引用次数: 56

Abstract

The design of a very simple CMOS high-Q active inductor suitable for applications at low supply voltage and high frequencies is discussed. The inductor value, L, and the quality factor, Q, are independently adjustable by two PMOS varactors (variable capacitors). Alternatively, L can be tuned via a bias current. The inductor's DC level is set by a bias voltage. The self-resonance frequency, f/sub r/, is larger than 1GHz and very high values of Q, up to Q=/spl infin/, can be obtained so that circuit can be used for constructing high-frequency oscillators. The performance of the electronic inductor is demonstrated by simulation.
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具有直流偏置控制的高频高q CMOS有源电感
讨论了一种简单的CMOS高q有源电感的设计,适用于低电源电压和高频的应用。电感值L和品质因数Q可由两个PMOS变容管(可变电容)独立调节。另外,L可以通过偏置电流调谐。电感的直流电平由偏置电压设定。自谐振频率f/sub r/大于1GHz,且Q值非常高,可达Q=/spl infin/,因此该电路可用于构建高频振荡器。通过仿真验证了该电子电感器的性能。
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