M. Borisov, D. Chelyubeev, V. Chernik, A. Gavrikov, D. Knyazkov, Peter Mikheev, V. Rakhovskiy, A. Shamaev
{"title":"Analysis of an effect of perturbations in SWHM and illuminating optical scheme parameters on an aerial image","authors":"M. Borisov, D. Chelyubeev, V. Chernik, A. Gavrikov, D. Knyazkov, Peter Mikheev, V. Rakhovskiy, A. Shamaev","doi":"10.1109/ASMC.2012.6212903","DOIUrl":null,"url":null,"abstract":"There is considered a new method of sub-wavelength holographic lithography (SWHL) for creation of IC layers aerial images. This approach proposes to use very local defects tolerable holographic patterns and simple optical scheme for photoresist exposure. The paper investigates influence of different perturbations occurring during either mask manufacturing or photoresist exposing on resulting topology image. Simulation showed that practically all perturbations which appear when using modern equipment do not significantly distort the resulting image, while the most problematic phase noise effects could be removed by introducing them into sub-wavelength holographic mask (SWHM) calculation.","PeriodicalId":283238,"journal":{"name":"2012 SEMI Advanced Semiconductor Manufacturing Conference","volume":"23 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 SEMI Advanced Semiconductor Manufacturing Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2012.6212903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
There is considered a new method of sub-wavelength holographic lithography (SWHL) for creation of IC layers aerial images. This approach proposes to use very local defects tolerable holographic patterns and simple optical scheme for photoresist exposure. The paper investigates influence of different perturbations occurring during either mask manufacturing or photoresist exposing on resulting topology image. Simulation showed that practically all perturbations which appear when using modern equipment do not significantly distort the resulting image, while the most problematic phase noise effects could be removed by introducing them into sub-wavelength holographic mask (SWHM) calculation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
