{"title":"A CMOS electrically reprogrammable ASIC with multi-level random logic capabilities","authors":"E. Goetting, S. Revak, Z. Jan","doi":"10.1109/ISSCC.1986.1156901","DOIUrl":null,"url":null,"abstract":"A 24-pin electrically-reprogrammable ASIC, implemented in CMOS EEPROM technology with two-layer polysilicon and two-layer metal, providing user logic complexity of 600-800 gate equivalents, will be described. Speeds of 15ns per internal logic level have been obtained with 50mW consumption.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"149 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1986.1156901","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A 24-pin electrically-reprogrammable ASIC, implemented in CMOS EEPROM technology with two-layer polysilicon and two-layer metal, providing user logic complexity of 600-800 gate equivalents, will be described. Speeds of 15ns per internal logic level have been obtained with 50mW consumption.
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