Ming Wen, Jiqu Xu, L. Liu, Xinyuan Zhao, P. T. Lai, W. Tang
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引用次数: 1
Abstract
A 6-layer continuous and uniform MoS2 film is successfully grown by thermal chemical vapor deposition (CVD) through optimizing its growth conditions, and is used as channel material to fabricate top-gated transistors by conventional lithography process. Also, the effects of a buffer layer on the electrical performance of the CVD MoS2 transistor are investigated, and enhanced carrier mobility (0.69 cm2/V·s) is achieved by using Ta2O5 as the buffer layer.
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