Detailed Analysis and Suppression of Crosstalk Voltage with SiC MOSFETs Considering Common-Source Inductance

Qiaopo Xiong, Hengyang Liu, S. Rao, Zhiqing Luo, Junyao Tu, Wubin Kong, Xunyu Duan, Zhike Li, Z. Zhong
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引用次数: 2

Abstract

The crosstalk voltage is the result of the combined effect of the displacement current generated by the gate-drain capacitance and the induced voltage introduced by the common source inductance. When considering common-source inductance, the relationship between the driving circuit impedance and the spikes of crosstalk voltage is no longer a single correlation. This paper starts with the crosstalk phenomenon in the double pulse test (DPT) circuit, introduces the causes of the crosstalk phenomenon in detail, and constructs the equivalent circuit of the drive loop to obtain the mathematical expression of the crosstalk voltage calculation. Finally, through mathematical analysis, the influence of gate-source capacitance and gate resistance on the spikes of crosstalk voltage is obtained, which provides guidance for the design of driving parameters.
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考虑共源电感的SiC mosfet串扰电压的详细分析与抑制
串扰电压是由栅极漏极电容产生的位移电流和共源电感引入的感应电压共同作用的结果。当考虑共源电感时,驱动电路阻抗与串扰电压尖峰的关系不再是单一的相关关系。本文从双脉冲测试(DPT)电路中的串扰现象入手,详细介绍了串扰现象产生的原因,并构造了驱动回路的等效电路,得到了串扰电压计算的数学表达式。最后,通过数学分析得出了栅极源电容和栅极电阻对串扰电压尖峰的影响,为驱动参数的设计提供了指导。
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