The theoretical analysis of the thermoelectric semiconducting crystalline materials figure of merit

L. Bulat, V. Zakordonets
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引用次数: 2

Abstract

The thermoelectric figure of merit z is computed for bipolar semiconducting materials with a degenerate gas of current carriers and a nonparabolic band structure. The factors that affect the value of z are analyzed. It is established that the figure of merit of such materials increases monotonically with increasing band gap, in contrast with semiconductors with a parabolic band. It is shown that zT<3 is always true in crystalline thermoelectric materials.
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理论分析了热电半导体晶体材料的优劣图
计算了具有载流子简并气体和非抛物带结构的双极半导体材料的热电优值z。分析了影响z值的因素。与具有抛物线型带隙的半导体相比,这种材料的优点系数随带隙的增加而单调增加。结果表明,在晶体热电材料中,zT<3总是成立的。
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