A. Jensen, J. Petillo, S. Ovtchinnikov, A. Burke, D. Panagos, C. Kostas, G. Stantchev, S. Cooke
{"title":"Large Scale Optimization of RF Devices","authors":"A. Jensen, J. Petillo, S. Ovtchinnikov, A. Burke, D. Panagos, C. Kostas, G. Stantchev, S. Cooke","doi":"10.1109/PLASMA.2017.8496324","DOIUrl":null,"url":null,"abstract":"The design cycle of RF devices is greatly facilitated by the use of the “virtual prototyping” methodology based on highfidelity computer simulations that are capable of predicting the RF device’s performance in response to changes in its physical parameters. In particular, parameters such as the critical dimensions of the structure or the quantitative properties of its various electromagnetic components are routinely used in the process of optimizing the desired performance characteristics of the RF device. In a typical optimization workflow these parameters are adjusted manually and the simulation code(s) run repeatedly with varying parameter values until desired design criteria are met. This type of process, however, is well suited to semisupervised global optimization. To this end we have integrated several codes including Capstone 1and MICHELLE 2with our recently developed framework prototype for high-performance RF device optimization based on DAKOTA 3and the parallel code deployment and management tool, Galaxy Simulation Builder (GSB 4. We present results from several RF device design studies- based on this extended framework and demonstrate how this approach can help automate and significantly accelerate the geometric parameter search, and ultimately improve the accuracy and efficiency of the RF device design cycle.","PeriodicalId":145705,"journal":{"name":"2017 IEEE International Conference on Plasma Science (ICOPS)","volume":"104 1-2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Conference on Plasma Science (ICOPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PLASMA.2017.8496324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The design cycle of RF devices is greatly facilitated by the use of the “virtual prototyping” methodology based on highfidelity computer simulations that are capable of predicting the RF device’s performance in response to changes in its physical parameters. In particular, parameters such as the critical dimensions of the structure or the quantitative properties of its various electromagnetic components are routinely used in the process of optimizing the desired performance characteristics of the RF device. In a typical optimization workflow these parameters are adjusted manually and the simulation code(s) run repeatedly with varying parameter values until desired design criteria are met. This type of process, however, is well suited to semisupervised global optimization. To this end we have integrated several codes including Capstone 1and MICHELLE 2with our recently developed framework prototype for high-performance RF device optimization based on DAKOTA 3and the parallel code deployment and management tool, Galaxy Simulation Builder (GSB 4. We present results from several RF device design studies- based on this extended framework and demonstrate how this approach can help automate and significantly accelerate the geometric parameter search, and ultimately improve the accuracy and efficiency of the RF device design cycle.