C. Roemer, G. Darbandy, M. Schwarz, J. Trommer, A. Heinzig, T. Mikolajick, W. Weber, B. Iñíguez, A. Kloes
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引用次数: 1
Abstract
This paper presents a closed-form, physics-based compact model which is used to calculate the DC characteristics of double gate Schottky barrier field-effect transistors (SBFETs) and reconfigurable field-effect transistors (RFETs). Therefore, the model calculates the drain current which consists of field emission through the Schottky barrier and thermionic emission over the barrier. In order to validate the model, this paper shows results for the calculated current in SBFETs and RFETs compared to transfer characteristics of simulated devices and measurements, which show a good agreement.
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