ZnO/ZnO:Al window and contact layer for thin film solar cells: high rate deposition by simultaneous RF and DC magnetron sputtering

K. Ellimer, R. Wendt, R. Cebulla
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引用次数: 2

Abstract

RF-magnetron sputtering of zinc oxide films (ZnO:Al and ZnO) is nearly exclusively used for the deposition of the window and contact layer for heterojunction thin film solar cells based on absorber materials like CuInSe/sub 2/, CdTe or CulnS/sub 2/. A drawback of this sputtering technique is the small deposition rate. This is caused by the low DC-voltage that develops at the target, since the sputtering rate in the energy range below 1 keV depends linearly on the acceleration voltage in the cathode fall. In order to increase the target voltage a simultaneous excitation by RF (13.56 MHz) and DC has been used. In this way, the advantages of both excitation modes have been combined for sputtering from oxidic targets (ZnO and ZnO:Al). Excitation by DC increases the deposition rate up to a factor of 1.5. On the other hand RF-excitation decreases the specific resistance significantly. This new deposition method has been used for the preparation of ZnO:Al/ZnO/CdS/CuInS/sub 2/-solar cells.
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薄膜太阳能电池用ZnO/ZnO:Al窗口和接触层:射频和直流磁控溅射同步高速率沉积
射频磁控溅射氧化锌薄膜(ZnO:Al和ZnO)几乎专门用于沉积基于CuInSe/sub 2/, CdTe或CulnS/sub 2/等吸收材料的异质结薄膜太阳能电池的窗口和接触层。这种溅射技术的缺点是沉积速率小。这是由于在靶上产生的低直流电压引起的,因为在低于1 keV的能量范围内的溅射速率线性依赖于阴极下降中的加速电压。为了提高目标电压,采用了射频(13.56 MHz)和直流同时激励的方法。通过这种方式,结合了两种激励模式的优点,用于氧化靶(ZnO和ZnO:Al)的溅射。直流激发可使沉积速率提高1.5倍。另一方面,射频激励显著降低了比电阻。该沉积方法已用于制备ZnO:Al/ZnO/CdS/CuInS/sub 2/-太阳能电池。
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