Karthikeyan Nagarajan, Mohammad Nasim Imtiaz Khan, Swaroop Ghosh
{"title":"ENTT: A Family of Emerging NVM-based Trojan Triggers","authors":"Karthikeyan Nagarajan, Mohammad Nasim Imtiaz Khan, Swaroop Ghosh","doi":"10.1109/HST.2019.8740836","DOIUrl":null,"url":null,"abstract":"Hardware Trojans in the form of malicious modifications during the design and/or the fabrication process is a security concern due to globalization of the semiconductor production process. A Trojan is designed to evade structural and functional testing and trigger under certain conditions (e.g., after a number of clock ticks or assertion of a rare net) and deliver the payload (e.g., denial-of-service, information leakage). A wide variety of logic Trojans (both triggers and payloads) have been identified, however, very limited literature exists on memory Trojans in spite of their high likelihood. Emerging Non-Volatile Memories (NVMs) e.g., Resistive RAM (RRAM) possess unique characteristics e.g., non-volatility and gradual drift in resistance with pulsing voltage that make them a prime target to deploy a Hardware Trojan. In this paper, we present a delay and voltage-based Trojan trigger by exploiting the RRAM resistance drift under pulsing current. Simulation results indicate that these triggers can be activated by accessing a pre-selected address 2500–3000 times (varies with trigger designs) since the proposed trigger requires a large number of hammerings to evade test phase. Due to non-volatility, the hammering need not be consecutive and therefore can evade system-level techniques that can classify hammering as a potential security threat. We also propose a mechanism to reset the triggers. The maximum area and static/dynamic power overheads of the trigger circuit are 6.68μm2 and 104.24μW/0.426μW, respectively in PTM 65nm technology.","PeriodicalId":146928,"journal":{"name":"2019 IEEE International Symposium on Hardware Oriented Security and Trust (HOST)","volume":"55 11","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Symposium on Hardware Oriented Security and Trust (HOST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HST.2019.8740836","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
Hardware Trojans in the form of malicious modifications during the design and/or the fabrication process is a security concern due to globalization of the semiconductor production process. A Trojan is designed to evade structural and functional testing and trigger under certain conditions (e.g., after a number of clock ticks or assertion of a rare net) and deliver the payload (e.g., denial-of-service, information leakage). A wide variety of logic Trojans (both triggers and payloads) have been identified, however, very limited literature exists on memory Trojans in spite of their high likelihood. Emerging Non-Volatile Memories (NVMs) e.g., Resistive RAM (RRAM) possess unique characteristics e.g., non-volatility and gradual drift in resistance with pulsing voltage that make them a prime target to deploy a Hardware Trojan. In this paper, we present a delay and voltage-based Trojan trigger by exploiting the RRAM resistance drift under pulsing current. Simulation results indicate that these triggers can be activated by accessing a pre-selected address 2500–3000 times (varies with trigger designs) since the proposed trigger requires a large number of hammerings to evade test phase. Due to non-volatility, the hammering need not be consecutive and therefore can evade system-level techniques that can classify hammering as a potential security threat. We also propose a mechanism to reset the triggers. The maximum area and static/dynamic power overheads of the trigger circuit are 6.68μm2 and 104.24μW/0.426μW, respectively in PTM 65nm technology.