Detecting Recycled SoCs by Exploiting Aging Induced Biases in Memory Cells

Ujjwal Guin, Wendong Wang, Charles Harper, A. Singh
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引用次数: 14

Abstract

The rise of recycled ICs being sold as new through the global semiconductor supply chain is a serious threat due to their inferior quality, shorter remaining life, and potentially poorer performance, compared to their authentic counterparts. While solutions, such as on-chip age monitors, have been proposed for new designs, detecting the recycling of older legacy ICs already in use is much harder; no reliable solution currently exists. In this paper, we propose a new and highly effective approach for detecting recycled ICs by exploiting the powerup state of on-chip SRAMs to evaluate the age of the chip. Our methodology does not require the introduction of any special aging detection circuitry, nor the recording and saving of historical circuit performance data as a reference to detect degradation from use. Instead, we exploit the novel observation that in a new unused SRAM, an equal number of cells power up to the 0 and 1 logic states, and also that this distribution becomes skewed in time due to aging in operation. Since SRAMs exist in virtually all systems-on-chip (SoCs), this simple aging detection method is widely applicable to both old and new designs. It is also low cost since does not require any special test equipment. We present experimental results using commercial off-the-shelf SRAM chips to validate the effectiveness of the proposed approach.
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利用老化诱导的记忆细胞偏差检测回收soc
通过全球半导体供应链作为新产品出售的回收集成电路的增加是一个严重的威胁,因为它们的质量较差,剩余寿命较短,而且与正品相比,性能可能更差。虽然已经为新设计提出了诸如片上年龄监视器之类的解决方案,但检测已经在使用的旧遗留ic的回收要困难得多;目前没有可靠的解决方案。在本文中,我们提出了一种新的、高效的方法来检测回收集成电路,通过利用片上ram的上电状态来评估芯片的年龄。我们的方法不需要引入任何特殊的老化检测电路,也不需要记录和保存历史电路性能数据作为检测使用退化的参考。相反,我们利用了新的观察结果,即在一个新的未使用的SRAM中,相同数量的单元功率达到0和1逻辑状态,并且由于运行中的老化,这种分布在时间上变得倾斜。由于sram几乎存在于所有的片上系统(soc)中,因此这种简单的老化检测方法广泛适用于新旧设计。它的成本也很低,因为不需要任何特殊的测试设备。我们提出了使用商用现货SRAM芯片的实验结果来验证所提出方法的有效性。
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