Radiation and thermal study on Defensive MOSFET

Abstract

As there is a demand for compactness in digital circuits, it is necessary to bring down the size of a MOSFET. In doing so, second order effects play a major role in affecting the performance of a transistor. It is mandatory to reduce the second order effects in order to have an efficient working of the MOSFET. Thus it is necessary to bring improvements (structural and functional) in MOSFET or develop new devices to meet the demands of the current generation. The existing conventional MOSFET and SOI MOSFET structures have certain disadvantages. A new hybrid structure which possesses desirable properties of both these structures is called Defensive MOSFET. The length of the oxide layer changes in different structures of the Defensive MOSFET. The study is aimed at finding the optimum length of the oxide layer by performing Radiation and Thermal Analysis on various structures.