Process optimization the growth of GaP epitaxial layer on 2° GaAs substrate

Abstract

GaP epitaxial layer was prepared by planetary MOVCD on 2°GaAs substrate. Use the XRD (X-ray diffraction) to test the full width at half maximum (FWHM) of rocking-curve and use the high power microscope to watch the crystal surface quality. Summary the growth condition of high-quality GaP epitaxial layer. The results show that the surface quality depends on high growth temperature and slow growth velocity. Perfect surface was obtained when the thickness that grow GaP epitaxial layer in low temperature and slow velocity is 20nm.