J. Alarcon-Salazar, M. Aceves-Mijares, S. Roman-Lopez, C. Falcony
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引用次数: 4
Abstract
Nano-metric layers were obtained by reactive sputtering using different oxygen/argon (O/Ar) flow rates. Si and SiO targets were used to make SiOx films (x≤2) and these were annealed at three different temperatures, 600 °C, 900 °C and 1100 °C during 30 minutes, in N2 ambient. The samples were characterized by Null Ellipsometry, Fourier Transform Infra Red (FTIR) spectroscopy, Photoluminescence (PL) and Atomic Force Microscopy (AFM). Results show that the as deposited films are off stoichiometric silicon, which move towards stoichiometric SiO2 with annealing. Poor photoluminescence was found. Average roughness (Sa) was determined between 2 a 4 nm after thermal treatments (TT).
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