{"title":"Device characterization and modeling for Terahertz CMOS design","authors":"M. Fujishima","doi":"10.1109/IMARC.2015.7411451","DOIUrl":null,"url":null,"abstract":"More and more CMOS integrated circuits operating at terahertz (≥ 0.1 THz) frequencies have been reported recently. However, design environments and techniques are not as well established as for RF CMOS circuits. This paper reviews our recent progress in device characterization and modeling for terahertz CMOS design. Finally, as an application example of terahertz CMOS design, low-power high-speed wireless data transfer at 11 Gb/s and 20 pJ and a 7-pJ/bit ultra-low-power transceiver chipset are presented.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMARC.2015.7411451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
More and more CMOS integrated circuits operating at terahertz (≥ 0.1 THz) frequencies have been reported recently. However, design environments and techniques are not as well established as for RF CMOS circuits. This paper reviews our recent progress in device characterization and modeling for terahertz CMOS design. Finally, as an application example of terahertz CMOS design, low-power high-speed wireless data transfer at 11 Gb/s and 20 pJ and a 7-pJ/bit ultra-low-power transceiver chipset are presented.
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