Improving NAND flash performance with read heat separation

R. Pletka, N. Papandreou, R. Stoica, H. Pozidis, Nikolas Ioannou, T. Fisher, Aaron Fry, Kip Ingram, Andrew Walls
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引用次数: 5

Abstract

The continuous growth in 3D-NAND flash storage density has primarily been enabled by 3D stacking and by increasing the number of bits stored per memory cell. Unfortunately, these desirable flash device design choices are adversely affecting reliability and latency characteristics. In particular, increasing the number of bits stored per cell results in having to apply additional voltage thresholds during each read operation, therefore increasing the read latency characteristics. While most NAND flash challenges can be mitigated through appropriate background processing, the flash read latency characteristics cannot be hidden and remains the biggest challenge, especially for the newest flash generations that store four bits per cell. In this paper, we introduce read heat separation (RHS), a new heat-aware data-placement technique that exploits the skew present in real-world workloads to place frequently read user data on low-latency flash pages. Although conceptually simple, such a technique is difficult to integrate in a flash controller, as it introduces a significant amount of complexity, requires more metadata, and is further constrained by other flash-specific peculiarities. To overcome these challenges, we propose a novel flash controller architecture supporting read heat-aware data placement. We first discuss the trade-offs that such a new design entails and analyze the key aspects that influence the efficiency of RHS. Through both, extensive simulations and an implementation we realized in a commercial enterprise-grade solid-state drive controller, we show that our architecture can indeed significantly reduce the average read latency. For certain workloads, it can reverse the system-level read latency trends when using recent multi-bit flash generations and hence outperform SSDs using previous faster flash generations.
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采用读热分离技术改善NAND闪存性能
3D- nand闪存存储密度的持续增长主要是通过3D堆叠和增加每个存储单元的存储位数来实现的。不幸的是,这些理想的闪存器件设计选择对可靠性和延迟特性产生了不利影响。特别是,增加每个单元存储的比特数会导致在每次读取操作期间必须施加额外的电压阈值,从而增加读取延迟特性。虽然大多数NAND闪存挑战可以通过适当的后台处理来缓解,但闪存读取延迟特性无法隐藏,并且仍然是最大的挑战,特别是对于每单元存储4位的最新一代闪存。在本文中,我们介绍了读取热分离(RHS),这是一种新的热感知数据放置技术,它利用现实工作负载中存在的倾斜,将频繁读取的用户数据放置在低延迟的闪存页面上。虽然概念上很简单,但这种技术很难集成到flash控制器中,因为它引入了大量的复杂性,需要更多的元数据,并且受到其他特定于flash的特性的进一步限制。为了克服这些挑战,我们提出了一种新的闪存控制器架构,支持读取热感知数据放置。我们首先讨论这种新设计所需要的权衡,并分析影响RHS效率的关键方面。通过广泛的模拟和我们在商业企业级固态驱动器控制器中实现的实现,我们表明我们的架构确实可以显着降低平均读取延迟。对于某些工作负载,当使用最近的多比特闪存时,它可以扭转系统级读延迟趋势,因此优于使用以前更快的闪存的ssd。
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