Jia-Shiang Fu, Xinen Zhu, J. Phillips, A. Mortazawi
{"title":"A ferroelectric-based impedance tuner for adaptive matching applications","authors":"Jia-Shiang Fu, Xinen Zhu, J. Phillips, A. Mortazawi","doi":"10.1109/MWSYM.2008.4632992","DOIUrl":null,"url":null,"abstract":"A general purpose impedance tuner is proposed for adaptive matching applications to compensate the impedance variations of devices such as antennas or power amplifiers. The impedance tuner, composed of a phase shifter and a variable transformer, is designed based on all-pass networks. Thin-film barium-strontium titanate (BST) parallel-plate capacitors fabricated on sapphire are used as the tuning elements. The impedance tuner is completed by mounting chip inductors and blocking capacitors on the same substrate. On-wafer measurement results show that, at 1.8 GHz, impedance transformation ratio of 4 can be achieved and the dissipation loss for all biasing voltages (0 to 18 V) is less than 5.5 dB.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2008.4632992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28
Abstract
A general purpose impedance tuner is proposed for adaptive matching applications to compensate the impedance variations of devices such as antennas or power amplifiers. The impedance tuner, composed of a phase shifter and a variable transformer, is designed based on all-pass networks. Thin-film barium-strontium titanate (BST) parallel-plate capacitors fabricated on sapphire are used as the tuning elements. The impedance tuner is completed by mounting chip inductors and blocking capacitors on the same substrate. On-wafer measurement results show that, at 1.8 GHz, impedance transformation ratio of 4 can be achieved and the dissipation loss for all biasing voltages (0 to 18 V) is less than 5.5 dB.