Pub Date : 2008-09-26DOI: 10.1109/MWSYM.2008.4633268
C. Mmasi, Renbin Wu, Vinu Govind, Sung-Hwan Min, Sid Dalmia, G. White
This paper describes the design and performances of the first single band (2.6 GHz) dual receive and single transmit 50 Ohm front end module (FEM) for WiMAX applications. The module is designed to meet error vector magnitude, adjacent channel power ratio, channel power and all 802.16 e uplink requirements. The transmit chain is made up of a narrowband balun, an inductively coupled pseudo-elliptic band pass filter, a three stage amplifier, a matching network and a SPDT switch. The FEM is characterized with a 16QAM 3/4, 10MHz BW 5ms frame uplink burst at 3.6V VCC and +23 dBm output power. The transmit path achieves an EVM of 3%, gain of approximately 29dB, gain flatness of 0.3dB, rejection of 51, 25, 32, 57dB at 1.9, 2.2, 3.3, 4 GHz respectively, and a low current drain. The dual line up receive path is designed to optimize RF performance and minimize preceding baseband sensitivity. The receive path is made up of a RF switch and pre select filters with insertion loss of 2.4 dB across the band, rejections of −53, −45, −25, −24 and −40 dB at 0.96, 1.9, 2.17, 3.3, and 4 GHz respectively. The front end module is integrated in a 7X7mm 40 pad LGA package, resulting in the first and smallest 1X2 802.16e FEM.
{"title":"Design and performance of a single band 1X2 RF front end module for mobile WiMAX applications","authors":"C. Mmasi, Renbin Wu, Vinu Govind, Sung-Hwan Min, Sid Dalmia, G. White","doi":"10.1109/MWSYM.2008.4633268","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633268","url":null,"abstract":"This paper describes the design and performances of the first single band (2.6 GHz) dual receive and single transmit 50 Ohm front end module (FEM) for WiMAX applications. The module is designed to meet error vector magnitude, adjacent channel power ratio, channel power and all 802.16 e uplink requirements. The transmit chain is made up of a narrowband balun, an inductively coupled pseudo-elliptic band pass filter, a three stage amplifier, a matching network and a SPDT switch. The FEM is characterized with a 16QAM 3/4, 10MHz BW 5ms frame uplink burst at 3.6V VCC and +23 dBm output power. The transmit path achieves an EVM of 3%, gain of approximately 29dB, gain flatness of 0.3dB, rejection of 51, 25, 32, 57dB at 1.9, 2.2, 3.3, 4 GHz respectively, and a low current drain. The dual line up receive path is designed to optimize RF performance and minimize preceding baseband sensitivity. The receive path is made up of a RF switch and pre select filters with insertion loss of 2.4 dB across the band, rejections of −53, −45, −25, −24 and −40 dB at 0.96, 1.9, 2.17, 3.3, and 4 GHz respectively. The front end module is integrated in a 7X7mm 40 pad LGA package, resulting in the first and smallest 1X2 802.16e FEM.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115784576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-20DOI: 10.1109/ARFTG.2008.4633329
J. E. Zuniga-Juarez, J. Reynoso‐Hernández, A. Zarate-de Landa
In this paper we present a new method for calculating the characteristic impedance of the transmission lines embedded in identical, symmetrical and reciprocal transitions. For calculating the matrix elements of the transitions as well as the characteristic impedance ZC of the lines, the proposed method uses measurements of two different lengths of transmission lines.
{"title":"A new method for determining the characteristic impedance Zc of transmission lines embedded in symmetrical transitions","authors":"J. E. Zuniga-Juarez, J. Reynoso‐Hernández, A. Zarate-de Landa","doi":"10.1109/ARFTG.2008.4633329","DOIUrl":"https://doi.org/10.1109/ARFTG.2008.4633329","url":null,"abstract":"In this paper we present a new method for calculating the characteristic impedance of the transmission lines embedded in identical, symmetrical and reciprocal transitions. For calculating the matrix elements of the transitions as well as the characteristic impedance ZC of the lines, the proposed method uses measurements of two different lengths of transmission lines.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117315155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633067
Lei Zhao, Guillaume Bigny, Jeffrey K. Jones
A 120 Watt LDMOS radio frequency integrated circuit (RFIC) targeting 1.8 GHz GSM, EDGE, and Evolved EDGE base station applications has been developed using state of the art design techniques and LDMOS technology. The amplifier was designed to cover the 1.8 GHz to 2 GHz GSM bands, and performs exceptionally well under both GSM and EDGE conditions. The two-stage, single-chip design exhibits 27 dB of gain and delivers 132 Watts of output power (1 dB compression; 27 Volt DC supply) with an associated PAE of 51%. Under EDGE modulation, at an average output power of 46 Watts, the EVM is less than 1.6 % and the spectral re-growth is −63 dBc and −78 dBc at 400, and 600 kHz offsets, respectively. This is the highest power, 1.8 to 2 GHz, two-stage RFIC in an over-molded plastic package, reported to date.
{"title":"A 120 watt, two-stage, LDMOS power amplifier IC at 1.8 GHz for GSM/EDGE applications","authors":"Lei Zhao, Guillaume Bigny, Jeffrey K. Jones","doi":"10.1109/MWSYM.2008.4633067","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633067","url":null,"abstract":"A 120 Watt LDMOS radio frequency integrated circuit (RFIC) targeting 1.8 GHz GSM, EDGE, and Evolved EDGE base station applications has been developed using state of the art design techniques and LDMOS technology. The amplifier was designed to cover the 1.8 GHz to 2 GHz GSM bands, and performs exceptionally well under both GSM and EDGE conditions. The two-stage, single-chip design exhibits 27 dB of gain and delivers 132 Watts of output power (1 dB compression; 27 Volt DC supply) with an associated PAE of 51%. Under EDGE modulation, at an average output power of 46 Watts, the EVM is less than 1.6 % and the spectral re-growth is −63 dBc and −78 dBc at 400, and 600 kHz offsets, respectively. This is the highest power, 1.8 to 2 GHz, two-stage RFIC in an over-molded plastic package, reported to date.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115295132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633214
D. Marpaung, C. Roeloffzen, W. van Etten
We demonstrate an analog photonic link with a high multioctave spurious-free dynamic range (SFDR) of 119 dBHz2/3. The link consists of a pair of semiconductor DFB lasers modulated in a push-pull manner and a balanced photodetector. With precise amplitude and phase matchings, a signal enhancement of 4.5 dB and a second-order inter-modulation distortion suppression of 40 dB relative to the case of a single arm optical link with one laser can be achieved. To our knowledge, the measured SFDR is one of the highest broadband value ever achieved with directly modulated lasers.
{"title":"A broadband high dynamic range analog photonic link using push-pull directly-modulated semiconductor lasers","authors":"D. Marpaung, C. Roeloffzen, W. van Etten","doi":"10.1109/MWSYM.2008.4633214","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633214","url":null,"abstract":"We demonstrate an analog photonic link with a high multioctave spurious-free dynamic range (SFDR) of 119 dBHz2/3. The link consists of a pair of semiconductor DFB lasers modulated in a push-pull manner and a balanced photodetector. With precise amplitude and phase matchings, a signal enhancement of 4.5 dB and a second-order inter-modulation distortion suppression of 40 dB relative to the case of a single arm optical link with one laser can be achieved. To our knowledge, the measured SFDR is one of the highest broadband value ever achieved with directly modulated lasers.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115603299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633020
E. Kunkee, S. Consolazio, J. Barner, T. Retelny, G. Dietz, E. Bogus, A. Cavus, J. Chen, J. Uyeda, R. Hsing, P. Chin, A. Ahkiyat, D. Chua, R. Clark, R. Haubenstricker, M. Johnson, T. Nguyen, P. Sahm, E. Zeliasz, R. Lai
Current microwave systems are constructed by integrating a large number of single technology components into a final product due to the limitations of any single transistor technology across all functions and metrics, thereby increasing cost and size of a given system. In this paper, we present a fabrication process using Molecular Beam Epitaxy (MBE) regrowth which allows the combination of High Electron Mobility Transistors (HEMT) with Heterostructure Bipolar Transistors (HBT) on a single GaAs chip without compromising the performance of either the HBT or HEMT. HBT fT/Fmax of 40/85 GHz and Beta of 170 for a collector current of 1mA; and HEMT fT/Fmax of 115/160 GHz with a gm-peak of 755 mS/mm has been achieved. Circuit performance demonstrates the potential of performance advances over HEMT-only circuit embodiments.
{"title":"A mixed HEMT-HBT MMIC technology using MBE regrowth","authors":"E. Kunkee, S. Consolazio, J. Barner, T. Retelny, G. Dietz, E. Bogus, A. Cavus, J. Chen, J. Uyeda, R. Hsing, P. Chin, A. Ahkiyat, D. Chua, R. Clark, R. Haubenstricker, M. Johnson, T. Nguyen, P. Sahm, E. Zeliasz, R. Lai","doi":"10.1109/MWSYM.2008.4633020","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633020","url":null,"abstract":"Current microwave systems are constructed by integrating a large number of single technology components into a final product due to the limitations of any single transistor technology across all functions and metrics, thereby increasing cost and size of a given system. In this paper, we present a fabrication process using Molecular Beam Epitaxy (MBE) regrowth which allows the combination of High Electron Mobility Transistors (HEMT) with Heterostructure Bipolar Transistors (HBT) on a single GaAs chip without compromising the performance of either the HBT or HEMT. HBT fT/Fmax of 40/85 GHz and Beta of 170 for a collector current of 1mA; and HEMT fT/Fmax of 115/160 GHz with a gm-peak of 755 mS/mm has been achieved. Circuit performance demonstrates the potential of performance advances over HEMT-only circuit embodiments.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123042597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632916
B. Green, H. Henry, J. Selbee, F. Clayton, K. Moore, M. CdeBaca, J. Abdou, C.L. Liu, O. Hartin, D. Hill, M. Miller, C. Weitzel
This report presents the DC, pulsed I–V, small signal, and large signal characteristics of Freescale’s 48 V GaN HFET technology. Characterization of large signal performance for a 12.6 mm at 48V drain bias shows 89 W output power with an associated power density of 7.1 W/mm, linear gain of 17.5 dB, and a power-added efficiency (PAE) of 62%. Analysis of channel temperature over drain bias shows that the maximum channel temperatures at 28 V and 48 V are 107 °C and 245 °C, respectively during saturated RF operation. Data for RF drift over time on a 16.2 mm device show less than 0.2 dB of RF drift for ≫1000 hrs. of testing. This level of RF performance represents a significant ≫4 dB gain and ≫2 W/mm power density improvement over Freescale’s previously reported GaN HFET technology.
本报告介绍了飞思卡尔48 V GaN HFET技术的直流、脉冲I-V、小信号和大信号特性。在48V漏极偏置下，12.6 mm的大信号性能表征显示，输出功率为89 W，相关功率密度为7.1 W/mm，线性增益为17.5 dB，功率附加效率(PAE)为62%。通道温度过漏偏置分析表明，饱和RF工作时，28v和48v的最大通道温度分别为107°C和245°C。在16.2 mm器件上随时间的射频漂移数据显示，在1000小时内，射频漂移小于0.2 dB。的测试。与飞思卡尔先前报道的GaN HFET技术相比，这一射频性能水平有了显著的4 dB增益和2 W/mm功率密度的提高。
{"title":"Characterization and thermal analysis of a 48 V GaN HFET device technology for wireless infrastructure applications","authors":"B. Green, H. Henry, J. Selbee, F. Clayton, K. Moore, M. CdeBaca, J. Abdou, C.L. Liu, O. Hartin, D. Hill, M. Miller, C. Weitzel","doi":"10.1109/MWSYM.2008.4632916","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632916","url":null,"abstract":"This report presents the DC, pulsed I–V, small signal, and large signal characteristics of Freescale’s 48 V GaN HFET technology. Characterization of large signal performance for a 12.6 mm at 48V drain bias shows 89 W output power with an associated power density of 7.1 W/mm, linear gain of 17.5 dB, and a power-added efficiency (PAE) of 62%. Analysis of channel temperature over drain bias shows that the maximum channel temperatures at 28 V and 48 V are 107 °C and 245 °C, respectively during saturated RF operation. Data for RF drift over time on a 16.2 mm device show less than 0.2 dB of RF drift for ≫1000 hrs. of testing. This level of RF performance represents a significant ≫4 dB gain and ≫2 W/mm power density improvement over Freescale’s previously reported GaN HFET technology.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116880942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632995
E. Lourandakis, Matthias Schmidt, A. Leidl, S. Seitz, R. Weigel
A new concept for a reduced size and tunable power divider is presented based on Barium-Strontium-Titanate (BST) varactors. The proposed topology operates like a conventional Wilkinson power divider while achieving size reduction and a frequency agile behavior in the frequency range of 1.7GHz to 2.1GHz. Tuning the operating frequency is achieved by substituting the quarter-wavelength transmission line segments with equivalent lowpass structures and using ferroelectric varactors as tuning elements. A prototype circuit was implemented and characterized showing good agreement between simulation results and measurements. The additional insertion loss in both output branches varied from 1.2 dB to 0.6 dB while maintaining a worst case amplitude- and phase difference of 0.5 dB and 9 degrees respectively for all operating cases. The isolation between the two output ports exceeded 25 dB over the whole tuning range.
{"title":"A tunable and reduced size power divider using ferroelectric thin-film varactors","authors":"E. Lourandakis, Matthias Schmidt, A. Leidl, S. Seitz, R. Weigel","doi":"10.1109/MWSYM.2008.4632995","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632995","url":null,"abstract":"A new concept for a reduced size and tunable power divider is presented based on Barium-Strontium-Titanate (BST) varactors. The proposed topology operates like a conventional Wilkinson power divider while achieving size reduction and a frequency agile behavior in the frequency range of 1.7GHz to 2.1GHz. Tuning the operating frequency is achieved by substituting the quarter-wavelength transmission line segments with equivalent lowpass structures and using ferroelectric varactors as tuning elements. A prototype circuit was implemented and characterized showing good agreement between simulation results and measurements. The additional insertion loss in both output branches varied from 1.2 dB to 0.6 dB while maintaining a worst case amplitude- and phase difference of 0.5 dB and 9 degrees respectively for all operating cases. The isolation between the two output ports exceeded 25 dB over the whole tuning range.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"23 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120860692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633181
K. Will, T. Meyer, Abbas Omar
A low-cost vector network analyzer (VNA) using a novel measurement technique is presented in this paper. The phase measurement is based on RF interferometry. A multiple output direct digital synthesizer (DDS) and low-cost scalar detectors are used for high-resolution phase measurements. A hardware example working up to a frequency of 150MHz and having board dimensions of only 10 cm × 6 cm is introduced. The accuracy is demonstrated by measurements and compared to a commercially available VNA using heterodyne detectors.
{"title":"Low-cost high-resolution handheld VNA using RF interferometry","authors":"K. Will, T. Meyer, Abbas Omar","doi":"10.1109/MWSYM.2008.4633181","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633181","url":null,"abstract":"A low-cost vector network analyzer (VNA) using a novel measurement technique is presented in this paper. The phase measurement is based on RF interferometry. A multiple output direct digital synthesizer (DDS) and low-cost scalar detectors are used for high-resolution phase measurements. A hardware example working up to a frequency of 150MHz and having board dimensions of only 10 cm × 6 cm is introduced. The accuracy is demonstrated by measurements and compared to a commercially available VNA using heterodyne detectors.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121027225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633098
Xiaoguang Liu, L. Katehi, D. Peroulis
A novel approach for creating an RF MEMS switch in the form of a microstrip-to-microstrip liquid-metal transition is presented. A slug of non-toxic liquid metal that controllably fills a through-wafer via is the key component of the switch. The large contact area between this slug and the solid microstrip lines renders this design an excellent candidate for high-power switching and particularly for hot-switching applications. With the slug inside the via the switch presents a measured insertion loss of 0.24 and 1.1 dB up to 5 and 10 GHz respectively. When the slug is removed from the via the switch isolation is measured to be more than 20 dB up to 7 GHz. The fabrication technology and critical trade-offs between RF and microfluidic performances are discussed in the paper. The slug movement is controlled by an external micropump. The recent advances in microfluidics have resulted in a large variety of practical micropumps that may be monolithically integrated with such switching designs.
{"title":"MEMS liquid metal through-wafer microstrip to microstrip transition","authors":"Xiaoguang Liu, L. Katehi, D. Peroulis","doi":"10.1109/MWSYM.2008.4633098","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633098","url":null,"abstract":"A novel approach for creating an RF MEMS switch in the form of a microstrip-to-microstrip liquid-metal transition is presented. A slug of non-toxic liquid metal that controllably fills a through-wafer via is the key component of the switch. The large contact area between this slug and the solid microstrip lines renders this design an excellent candidate for high-power switching and particularly for hot-switching applications. With the slug inside the via the switch presents a measured insertion loss of 0.24 and 1.1 dB up to 5 and 10 GHz respectively. When the slug is removed from the via the switch isolation is measured to be more than 20 dB up to 7 GHz. The fabrication technology and critical trade-offs between RF and microfluidic performances are discussed in the paper. The slug movement is controlled by an external micropump. The recent advances in microfluidics have resulted in a large variety of practical micropumps that may be monolithically integrated with such switching designs.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121337603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633167
R. Simons, Jeffrey D. Wilson, D. A. Force
Recent advances in high power and efficiency space traveling-wave tube amplifiers (TWTAs) for NASA’s space-to-Earth communications are presented in this paper. The RF power and efficiency of a new K-Band amplifier is 40 Watts and 50% and that of a new Ka-Band amplifier is 200 Watts and 60%. An important figure-of-merit, which is defined as the ratio of the RF power output to the mass (W/kg) of a TWT has improved by a factor of ten over the previous generation Ka-Band devices.
{"title":"High power and efficiency space traveling-wave tube amplifiers with reduced size and mass for NASA missions","authors":"R. Simons, Jeffrey D. Wilson, D. A. Force","doi":"10.1109/MWSYM.2008.4633167","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633167","url":null,"abstract":"Recent advances in high power and efficiency space traveling-wave tube amplifiers (TWTAs) for NASA’s space-to-Earth communications are presented in this paper. The RF power and efficiency of a new K-Band amplifier is 40 Watts and 50% and that of a new Ka-Band amplifier is 200 Watts and 60%. An important figure-of-merit, which is defined as the ratio of the RF power output to the mass (W/kg) of a TWT has improved by a factor of ten over the previous generation Ka-Band devices.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125290495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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