D4. Monte Carlo simulation of single electronics based on orthodox theory

A. Elabd, A. Shalaby, E. M. El-Rabaie
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引用次数: 1

Abstract

In this paper, we present a detailed algorithm to compute the current-voltage characteristics of the single electron circuits by Monte Carlo method. Our simulator is designed to solve capacitance systems that contain tunnel junctions. The simulation process is based on orthodox theory. Single electron box, single electron transistor, electron pump and inverter circuits have been investigated, and the results are compared with the previous relevant literature.
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D4。基于正统理论的单电子蒙特卡罗仿真
本文提出了一种用蒙特卡罗方法计算单电子电路电流-电压特性的详细算法。我们的模拟器设计用于解决包含隧道结的电容系统。仿真过程基于正统理论。对单电子箱、单电子晶体管、电子泵和逆变电路进行了研究,并与以往的相关文献进行了比较。
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