Study on Abnormal Gate Structures of GaN HEMT Devices

Abstract

In this paper, the abnormal gate structures of GaN HEMT devices is analyzed and classified. The abnormal manifestations of the broken gate device are analyzed by DC test, optical microscope and scanning electron microscope, including the loss of gate foot, the loss of some gate foot and gate cap, the complete loss of gate structure and the loss of field plate. By analyzing these abnormal devices, we can judge whether there is a lack of gate structure in the failed devices, and then put forward solutions and optimization schemes.