{"title":"Latch-up prevention in insulated gate bipolar transistors","authors":"A. Nezar, P. Mok, C. Salama","doi":"10.1109/ISPSD.1993.297074","DOIUrl":null,"url":null,"abstract":"A technique for improving the latch-up capability of the LIGBT (lateral insulated-gate bipolar transistor) is proposed. A shallow trench at the cathode is used to reduce the p-base resistance and eliminate the p-well resistance, and consequently prevent the device from latching-up at low voltages. The latch-up current for the trenched LIGBT is higher than that of a conventional LIGBT. The holding voltage exceeds the saturation voltage by far and allows the device to operate at high static power.<<ETX>>","PeriodicalId":223632,"journal":{"name":"[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1993.297074","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A technique for improving the latch-up capability of the LIGBT (lateral insulated-gate bipolar transistor) is proposed. A shallow trench at the cathode is used to reduce the p-base resistance and eliminate the p-well resistance, and consequently prevent the device from latching-up at low voltages. The latch-up current for the trenched LIGBT is higher than that of a conventional LIGBT. The holding voltage exceeds the saturation voltage by far and allows the device to operate at high static power.<>
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