T. Sarkar, A. Challa, Kirk Huang, P. Venkatraman, D. Probst
{"title":"Application-driven device/circuit co-simulation framework for power MOSFET design and technology development","authors":"T. Sarkar, A. Challa, Kirk Huang, P. Venkatraman, D. Probst","doi":"10.1109/ISPSD.2018.8393659","DOIUrl":null,"url":null,"abstract":"Physics-based device-circuit co-simulation turns out to be an extremely valuable tool to guide and optimize process technology development and device design for high-performance power MOSFETs. It is particularly well-suited to the need of emerging trend of integration of discrete power devices and analog ICs in the same package. In this article, we outline the key features and benefits of such an integrated design framework.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Physics-based device-circuit co-simulation turns out to be an extremely valuable tool to guide and optimize process technology development and device design for high-performance power MOSFETs. It is particularly well-suited to the need of emerging trend of integration of discrete power devices and analog ICs in the same package. In this article, we outline the key features and benefits of such an integrated design framework.
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