J. Vobecký, V. Boţan, K. Meier, K. Tugan, M. Bellini
{"title":"Local lifetime control for enhanced ruggedness of HVDC thyristors","authors":"J. Vobecký, V. Boţan, K. Meier, K. Tugan, M. Bellini","doi":"10.1109/ISPSD.2018.8393626","DOIUrl":null,"url":null,"abstract":"Proton irradiation is experimentally demonstrated to increase the ruggedness of large area thyristors for HVDC. While maintaining very low On-state losses at V<inf>T</inf> below 1.7 V and 1.8 V for 7.2 and 8.5 kV classes (I<inf>T</inf> = 6.25 kA, T = 90 °C), record low leakage current has been achieved at 150 mm silicon wafers together with increased surge current, higher dV/dt capability and lower circuit commutated recovery time t<inf>q</inf>.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393626","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Proton irradiation is experimentally demonstrated to increase the ruggedness of large area thyristors for HVDC. While maintaining very low On-state losses at VT below 1.7 V and 1.8 V for 7.2 and 8.5 kV classes (IT = 6.25 kA, T = 90 °C), record low leakage current has been achieved at 150 mm silicon wafers together with increased surge current, higher dV/dt capability and lower circuit commutated recovery time tq.
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