Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits

J. Goyvaerts, S. Kumari, S. Uvin, Jing Zhang, R. Baets, A. Gocalinska, E. Pelucchi, B. Corbett, G. Roelkens
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引用次数: 1

Abstract

We demonstrate the integration of GaAs p-i-n photodiodes onto silicon nitride grating couplers by means of transfer-printing. Dark currents below 20 pA and waveguide-coupled responsivities of 0.30 A/W are obtained. The detectors are integrated with an on-chip near-infrared spectrometer.
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氮化硅光子集成电路上GaAs p-i-n光电二极管的转移打印集成
我们展示了用转移印刷的方法将砷化镓p-i-n光电二极管集成到氮化硅光栅耦合器上。得到了低于20pa的暗电流和0.30 A/W的波导耦合响应。探测器与芯片上的近红外光谱仪集成在一起。
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