{"title":"Epitaxial growth and physics of nanostructures for quantum dot lasers","authors":"Y. Arakawa","doi":"10.1109/LEOS.1996.565260","DOIUrl":null,"url":null,"abstract":"We succeeded in the first demonstration of a vertical microcavity quantum dot laser operated at 77K. The microcavity (/spl lambda/=985nm) consists of an InGaAs quantum dot layer grown by the S-K growth mode with MOCVD, located between two AlAs-Al/sub 0.2/Ga/sub 0.8/As distributed Bragg reflector mirrors.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.1996.565260","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We succeeded in the first demonstration of a vertical microcavity quantum dot laser operated at 77K. The microcavity (/spl lambda/=985nm) consists of an InGaAs quantum dot layer grown by the S-K growth mode with MOCVD, located between two AlAs-Al/sub 0.2/Ga/sub 0.8/As distributed Bragg reflector mirrors.
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