Near-field analysis of beam properties of InGaAs ridge lasers

W. Herzog, M. Unlu, B. Goldberg, G. H. Rhodes, C. Harder
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引用次数: 1

Abstract

We report mode structure and beam propagation analysis of high power strained (In,Ga)As quantum well lasers using the super-resolution capabilities of near-field scanning optical microscopy (NSOM). We are able to directly measure the optical beam waist and astigmatism by imaging the output of the laser diode at various heights above the device facet. In the near-field we observe spatial shifts in the position of the optical field between different spectral components of the laser diode emission.
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InGaAs脊激光器光束特性的近场分析
本文报道了利用近场扫描光学显微镜(NSOM)的超分辨能力,对高功率应变(In,Ga)As量子阱激光器的模式结构和光束传播进行了分析。我们能够直接测量光束腰和散光通过成像的输出激光二极管在器件面以上的不同高度。在近场中,我们观察到激光二极管发射的不同光谱成分之间光场位置的空间位移。
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High bandwidth polymer modulators Properties of small-aperture selectively oxidized VCSELs Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer Near-field analysis of beam properties of InGaAs ridge lasers Monolithic integration and individually-optimized operation of In/sub 0.2/Ga/sub 0.8/As vertical-cavity surface-emitting lasers and resonance-enhanced quantum well photodetectors
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