J. Kirdoda, R. Millar, Fiona Thorburn, Laura L. Huddleston, D. Dumas, Z. Greener, K. Kuzmenko, P. Vines, L. Ferre-Llin, Xin Yi, S. Watson, B. Benakaprasad
{"title":"Pseudo- planar Ge-on-Si single-photon avalanche detectors with low noise equivalent power","authors":"J. Kirdoda, R. Millar, Fiona Thorburn, Laura L. Huddleston, D. Dumas, Z. Greener, K. Kuzmenko, P. Vines, L. Ferre-Llin, Xin Yi, S. Watson, B. Benakaprasad","doi":"10.1117/12.2594639","DOIUrl":null,"url":null,"abstract":"We present a pseudo-planar geometry 26µm diameter Ge-on-Si single-photon avalanche diode (SPAD) detector with temperature insensitive single photon detection efficiency of 29.4% at 1310nm wavelength for applications including free-space LIDAR. A record low dark count rate of 104 counts/s at 125K at an excess bias of 6.6% is demonstrated, with temporal jitter reaching 134ps. The noise-equivalent power is measured to be 7.7x10-17WHz-12 which is a 2 orders of magnitude reduction when compared to comparable 25µm mesa devices. This device represents the state-of-the-art for Ge-on-Si SPADs, and highlights that these Si foundry compatible devices have enormous potential for SWIR single-photon applications.","PeriodicalId":245324,"journal":{"name":"Infrared Sensors, Devices, and Applications XI","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared Sensors, Devices, and Applications XI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2594639","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present a pseudo-planar geometry 26µm diameter Ge-on-Si single-photon avalanche diode (SPAD) detector with temperature insensitive single photon detection efficiency of 29.4% at 1310nm wavelength for applications including free-space LIDAR. A record low dark count rate of 104 counts/s at 125K at an excess bias of 6.6% is demonstrated, with temporal jitter reaching 134ps. The noise-equivalent power is measured to be 7.7x10-17WHz-12 which is a 2 orders of magnitude reduction when compared to comparable 25µm mesa devices. This device represents the state-of-the-art for Ge-on-Si SPADs, and highlights that these Si foundry compatible devices have enormous potential for SWIR single-photon applications.
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