A Comparison Electronic Specifications of the MS & MPS type Schottky Diodes (SDs) via Utilizing Voltage-Current (V-I) Characteristics

Abstract

The effects of the application of the (TeO2:Cu-PVP) interface to the Al/p-Si (MS) type SD on the performance of the new Al/(TeO2:Cu doped PVP)/p-Si (MPS) SD were reviewed using forward and reverse bias V-I measurements. The thermionic emission (TE) and Cheung & Cheung functions were employed to ascertain the influences of an additional organic interfacial layer on the comparative outcomes of this research. Thus, some essential electrical attributes such as saturation current (Is), ideality factor (n), rectification-ratio (R.R.=Iforward/Ireverse), barrier height B.H. (Φbo), and series/shunt resistances (Rs/Rsh) were computed. Furthermore, the density of surface states (Nss) was acquired from the V-I plots according to the Card & Rhoderick method. The observed experimental results indicated that the (TeO2:Cu-PVP) inter-layer enhanced the quality of MS type SD as respects obtained low reverse current, Nss, Rs, and high Rsh and R.R. values. All these results indicate that (TeO2:Cu-PVP) inter-layer can be used successfully instead of conventional insulators for its favored specifications like easy fabrication processes, low cost, and flexibility features.