Analysis of resistive load ring oscillator

Saurav Mandal, A. K. Mal
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Abstract

In this paper, a new equation for frequency of a ring oscillator are proposed. This method is general enough to be used in all types of ring oscillator delay stages. In this proposed technique we are able to calculate the ring oscillator frequency in absence of process parameters such as threshold voltage, GAMMA, THETA etc. In the underlying work, a comparison has been shown between the analytical result and simulation result of ring oscillator using 50nm technology. The advantage of this method over other defined techniques is that its so simple and accurate to calculate the frequency with the help of pick amplitude voltage of ring oscillator. Result has been obtained using LTspice IV and BSIM 4.0 level 54 based MOSFET model using 50nm CMOS technology.
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电阻负载环形振荡器的分析
本文提出了一个新的环形振荡器频率方程。这种方法是通用的,足以用于所有类型的环形振荡器延迟级。在这种提出的技术中,我们能够在没有工艺参数(如阈值电压,GAMMA, THETA等)的情况下计算环形振荡器频率。在基础工作中,将分析结果与50nm环形振荡器的仿真结果进行了比较。该方法与其他已定义的方法相比,其优点是利用环形振荡器的挑幅电压计算频率简单、准确。采用LTspice IV和BSIM 4.0 54级基于50nm CMOS技术的MOSFET模型,得到了结果。
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