N. Miller, Alexis Brown, Michael Elliott, R. Gilbert
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引用次数: 0
Abstract
This paper presents for the first time a temperature dependent ASM-HEMT model extracted from a gallium nitride (GaN) high electron mobility transistor (HEMT) validated with Ka-band on-wafer large-signal measurements. Modifications are made to the standard ASM-HEMT model to accurately model the DC, small-signal, and large-signal measurements collected as a function of ambient temperature. This work could shed light on the temperature dependence of GaN HEMTs and could enable the rapid design of high temperature integrated circuits.
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