M. Kiuchi, Ryoma Miyake, S. Yoshida, Shuji Tanaka, Tsuyoshi Takemoto, Y. Yamaguchi, K. Komaki
{"title":"Commercial Production of Low-k PZT film using Sputtering Method","authors":"M. Kiuchi, Ryoma Miyake, S. Yoshida, Shuji Tanaka, Tsuyoshi Takemoto, Y. Yamaguchi, K. Komaki","doi":"10.1109/SENSORS47125.2020.9278888","DOIUrl":null,"url":null,"abstract":"Monocrystalline-like epitaxial PZT films for commercial use are described for piezoelectric MEMS applications. The composition ratios of Zr and Ti in the films are Morphotropic phase boundary (52:48) and Ti rich (42:58). The films with a thickness of 1 μm to 2 μm exhibit typical transverse piezoelectric d31 coefficients of -185 pm/V and -149 pm/V, respectively. Relative dielectric permittivities are 430 and 264. Dielectric losses are 0.015 and 0.020. Both of films of figure-of-merit for MEMS device are more than 50 GPa. These films are commercially available for piezoelectric MEMS device development and production.","PeriodicalId":338240,"journal":{"name":"2020 IEEE Sensors","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSORS47125.2020.9278888","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Monocrystalline-like epitaxial PZT films for commercial use are described for piezoelectric MEMS applications. The composition ratios of Zr and Ti in the films are Morphotropic phase boundary (52:48) and Ti rich (42:58). The films with a thickness of 1 μm to 2 μm exhibit typical transverse piezoelectric d31 coefficients of -185 pm/V and -149 pm/V, respectively. Relative dielectric permittivities are 430 and 264. Dielectric losses are 0.015 and 0.020. Both of films of figure-of-merit for MEMS device are more than 50 GPa. These films are commercially available for piezoelectric MEMS device development and production.
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