Development of no fluctuation by PZT of course approaching mechanism on AFM/FFM

S. Fujisawa
{"title":"Development of no fluctuation by PZT of course approaching mechanism on AFM/FFM","authors":"S. Fujisawa","doi":"10.1299/jsmemnm.2019.10.20am2pn333","DOIUrl":null,"url":null,"abstract":"This reports the development of no fluctuation by PZT of course approaching mechanism (Inchworm) on AFM/FFM (atomic force microscope/frictional force microscope), where the course approaching mechanism of the sample (work) or probe (processing edge) is discussed. On the conventional inchworm the electric noise which is amplified at PZT actuator at fixing position of course approaching mechanism. On the other hand, the mechanism which is proposed here does not influenced by the electric noise at fixing position. In practice, by implementing the spring element of frame of inchworm parallel to the PZT actuator, with no applying the electric voltage, which corresponds the shrinking manner the fixing the sample (work) or probe (processing edge) is realized. The motion distance of one step is desired to be 1nm, which is changed by max. 1/10 by changing the voltage applying the PZT actuator","PeriodicalId":344990,"journal":{"name":"The Proceedings of the Symposium on Micro-Nano Science and Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Proceedings of the Symposium on Micro-Nano Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1299/jsmemnm.2019.10.20am2pn333","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This reports the development of no fluctuation by PZT of course approaching mechanism (Inchworm) on AFM/FFM (atomic force microscope/frictional force microscope), where the course approaching mechanism of the sample (work) or probe (processing edge) is discussed. On the conventional inchworm the electric noise which is amplified at PZT actuator at fixing position of course approaching mechanism. On the other hand, the mechanism which is proposed here does not influenced by the electric noise at fixing position. In practice, by implementing the spring element of frame of inchworm parallel to the PZT actuator, with no applying the electric voltage, which corresponds the shrinking manner the fixing the sample (work) or probe (processing edge) is realized. The motion distance of one step is desired to be 1nm, which is changed by max. 1/10 by changing the voltage applying the PZT actuator
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于AFM/FFM的PZT无波动过程逼近机制的研制
本文报道了在AFM/FFM(原子力显微镜/摩擦力显微镜)上PZT轨迹接近机构(尺蠖)无波动的发展,讨论了样品(工件)或探针(加工边缘)的轨迹接近机制。在常规尺蠖上,PZT作动器在接近航向机构固定位置处的电噪声被放大。另一方面,本文提出的机理不受固定位置电噪声的影响。在实际应用中,通过将蜗杆框架弹簧元件与压电陶瓷作动器平行,不施加电压,以对应收缩方式实现对试样(工件)或探头(加工边缘)的固定。希望每一步的运动距离为1nm,由max改变。1/10通过改变施加PZT执行器的电压
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Fabrication method of micromachined quartz glass resonator using temporal Au supporting structures Magnet scanning based cell patterning assisted by the magneto-Archimedes effect Development of no fluctuation by PZT of course approaching mechanism on AFM/FFM Hydrogel microchamber by two-photon stereolithography for reconstructing three-dimensional neural network High thermal conductivity and temperature rise analysis of polyimide insulation film by adding fine particles
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1