Wigner Monte Carlo Simulation of CNTFET: Comparison Between Semi-Classical and Quantum Transport

Huu-Nha Nguyen, D. Querlioz, S. Galdin-Retailleau, A. Bournel, P. Dollfus
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引用次数: 1

Abstract

This paper examines the quantum transport effects in carbon nanotube field-effect transistors (CNTFETs) within the Wigner's function formalism, using a particle Monte Carlo technique. The comparison with semi-classical simulation shows that significant differences observed at the microscopic level are not necessarily strongly reflected at the macroscopic level in terms of drain current. The dependence of quantum effects on gate length is also investigated.
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CNTFET的Wigner Monte Carlo模拟:半经典输运与量子输运的比较
本文利用粒子蒙特卡罗技术研究了维格纳函数形式下碳纳米管场效应晶体管(cntfet)中的量子输运效应。与半经典模拟的比较表明,在微观水平上观察到的显著差异并不一定强烈反映在宏观水平上的漏极电流。研究了量子效应对栅长度的依赖性。
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