Geometric scalable 2-port center-tap inductor modeling

Abstract

In this paper, we have developed equivalent scalable inductor models for symmetrically octagonal spiral inductors. Adjustable parameters include number of turns (Nturn), inner diameter (D), width (W) and spacing (S) of inductors with models being scaled over a wide specification range. A complementary frequency independent scalable 4-PI model are presented for accurate modeling When compared with simulation and measurement results, the models exhibit an error percentage for inductance at 1 GHz / 5 GHz at within ±10 %, error percentage for Q-peak (Peak Quality factor) is within ±20 % and error percentage for self resonant frequency (SRF) is within ±7 %.