DC low current Hall effect measurements

Yannai Namia-Cohen, Y. Sharon, B. Khachatryan, D. Cheskis
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引用次数: 2

Abstract

A lot of electronic devices utilize linear Hall sensors to measure current and the magnetic field, as well as to perform switching and latching operations. Smartphones, laptops, and ereaders all work with very low (sub-milliampere) currents. To perform a switching function in low-power devices, however, Hall sensors must work in the microampere regime. In this work we demonstrate, for the first time, the ability of a standard Hall detector to work linearly in the microampere regime between 0 and 0.7 Tesla. To do so, we developed a current source with RMS noise on the order of 10–100 pA/sqrt(Hz). An optimized electronic circuit with minimal connections feeds current to the Hall sensor, and the Hall voltage is measured within industrial nanovoltmeter. We demonstrate the capabilities of this system by precisely measuring the slope of the Hall effect with a four-point probe at current intensities of 100, 10, and 1 microA. We expect that our system can work as a microampere Hall sensor using external voltage detectors.
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直流小电流霍尔效应测量
许多电子设备利用线性霍尔传感器来测量电流和磁场,以及执行开关和锁存操作。智能手机、笔记本电脑和电子阅读器的工作电流都很低(亚毫安)。然而,为了在低功耗器件中执行开关功能,霍尔传感器必须在微安范围内工作。在这项工作中,我们首次证明了标准霍尔探测器在0到0.7特斯拉之间的微安范围内线性工作的能力。为此,我们开发了一种RMS噪声为10-100 pA/sqrt(Hz)的电流源。一个优化的电子电路以最小的连接为霍尔传感器提供电流,霍尔电压在工业纳伏特表内测量。我们通过在电流强度为100,10和1 microA时用四点探头精确测量霍尔效应的斜率来证明该系统的能力。我们期望我们的系统可以作为一个微安培霍尔传感器使用外部电压检测器。
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